RB481KFHTL

更新时间： 2024-10-30 13:12:51

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
2页	63K
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RB481KFHTL 数据手册

RB481K

Diodes

Schottky Barrier Diode

RB481K

!Applications

!External dimensions (Units: mm)

Low current rectification

1.25±0.1

0.6 0.65

0.3±0.1 0.2±0.1

0.9±0.1

0.7

!Features

1) Compact size.

(1) (4)

3 U

0~0.1

2) High reliability.

(2) (3)

3) Extremely low forward voltage.

4) This is a composite component and is ideal for

reducing the number of components used.

0.2±0.1 0.2±0.1

0.65 0.65

0.15±0.05

1.25±0.1

2.0±0.2

(1)

(4)

(3)

!Construction

Silicon epitaxial planar

(2)

ROHM : UMD4

EIAJ : SC - 82

!Absolute maximum ratings (Ta=25°C)

Parameter

Peak reverse voltage

DC reverse voltage

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

∗ 60 Hz for 1

Symbol

Limits

Unit

0.2

∗

FSM

125

°C

Tstg

−40~+125

!Electrical characteristics (Ta=25°C unless otherwise noted)

Parameter

Forward voltage

Symbol

Min.

Typ.

0.18

0.25

0.34

Max.

0.28

0.33

0.43

Unit

Conditions

−

=1mA

=10mA

_F=100mA

−

0.40

3.6

0.50

=200mA

µA

Reverse current

R=10V

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