Datasheet > RB481Y_1

RB481Y_1

更新时间： 2024-10-30 03:37:55

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	157K
描述
Schottky barrier diode

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中文翻译

获取价格

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RB481Y_1 数据手册

RB481Y

Diodes

Schottky barrier diode

RB481Y

zApplications

z Dimensions (Unit : mm)

z Land size figure (Unit : mm)

0.5

Low current rectification

1.6±0.05

1.6±0.1

0.22±0.05

0.13±0.05

(4)

(3)

zFeatures

1) Ultra Small power mold type. (EMD4)

2) Low V_F

0～0.1

1.0

3) High reliability.

(1)

(2)

EMD4

0.5

1.0±0.1

0.5±0.05

zConstruction

Silicon epitaxial planar

zStructure

ROHM : EMD4

JEITA : SC-75A Size

dot (year week factory)

z Taping specifications (Unit : mm)

φ1.5±0.1

2.0±0.05

4.0±0.1

0.3±0.1

ꢀꢀꢀꢀꢀ

1PIN

φ0.8±0.1

1.65±0.1

4.0±0.1

0.65±0.1

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_R

Unit

Reverse voltage

100

Average rectified forward current（*1）

Forward current surge peak （60Hz・1cyc）（*1）

Junction temperature

I_FSM

125

℃

Storage temperature

-40 to +125

Tstg

℃

(*1) Rating of per diode

zElectrical characteristics (Ta=25°C)

Parameter

Forward voltage

Reverse current

Conditions

I_F=1mA

I_F=10mA

Symbol

V_F1

V_F2

V_F3

I_R

Min.

Typ.

Max.

Unit

0.28

0.33

0.43

I_F=100mA

V_R=10V

µA

Rev.C

1/3

12 3 4

中文翻译

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RB481YT2R	ROHM	获取价格	Rectifier Diode, Schottky, 2 Element, 0.1A, 30V V(RRM), Silicon, SC-75A, 4 PIN