Datasheet > RB481Y-90_1

RB481Y-90_1

更新时间： 2024-10-30 03:10:31

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	154K
描述
Schottky barrier diode

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中文翻译

获取价格

数据手册

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RB481Y-90_1 数据手册

RB481Y-90

Diodes

Schottky barrier diode

RB481Y-90

zApplications

zDimensions (Unit : mm)

zLand size figure (Unit : mm)

Low current rectification

0.5

1.6±0.05

1.6±0.1

0.22±0.05

0.13±0.05

zFeatures

(4)

(3)

1) Ultra small mold type. (EMD4)

2) Low V^F

3) High reliability

0～0.1

1.0

EMD4

(1)

(2)

zConstruction

Silicon epitaxial planar

0.5

1.0±0.1

0.5±0.05

zStructure

ROHM : EMD4

JEITA : SC-75A Size

dot (year week factory)

zTaping dimensions (Unit : mm)

φ1.5±0.1

2.0±0.05

4.0±0.1

0.3±0.1

ꢀꢀꢀꢀꢀ

1PIN

φ0.8±0.1

1.65±0.1

1.7±0.05

4.0±0.1

0.65±0.1

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current（*1）

100

I_FSM

Forward current surge peak （60Hz・1cyc）（*1）

Junction temperature

125

℃

Storage temperature

-40 to +125

Tstg

℃

(*1) Rating of per diode

zElectrical characteristic (Ta=25°C)

Parameter

Forward voltage

Reverse current

Conditions

Symbol

Min.

Typ.

0.55

Max.

0.61

100

Unit

V_F

I_R

I_F=100mA

V_R=90V

µA

Rev.C

1/3

12 3 4

中文翻译

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