Datasheet > RB481Y_09

RB481Y_09

更新时间： 2024-09-13 09:37:55

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	191K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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RB481Y_09 数据手册

Schottky Barrier Diode

RB481Y

●Applications

●Dimensions (Unit : mm)

●Land size figure (Unit : mm)

Low current rectification

0.5

1 ±0.05

1.6.6±0.1

0.22±0.05

0.13±0.05

●Features

(4)

(3)

1)Ultra small mold type. (EMD4)

2)Low VF

1.0

3)High reliability

0～0.1

EMD4

(1)

(2)

●Construction

Silicon epitaxial planar

●Structure

0.5

1.0±0.1

0.5±0.05

ROHM : EMD4

JEITA : SC-75A Size

dot (year week factory)

●Taping specifications (Unit : mm)

φ1.5±0.1

2.0±0.05

4.0±0.1

0.3±0.1

ꢀꢀꢀꢀꢀ

1PIN

φ0.8±0.1

1.65±0.1

4.0±0.1

0.65±0.1

●Absolute maximum ratings (Ta=25℃)

Parameter

Limits

Symbol

Unit

Reverse voltage (DC)

V_R

I_FSM

Average rectified forward current（*1）

Forward current surge peak （60Hz・1cyc）（*1）

Junction temperature

100

125

℃

Storage temperature

-40 to +125

Tstg

℃

(*1) Rating of per diode

●Electrical characteristics (Ta=25℃)

Parameter

Conditions

I_F=1mA

Symbol

V_F1

Min.

Typ.

0.17

0.24

0.34

Max.

0.28

0.33

0.43

Unit

Forward voltage

V_F2

I_F=10mA

I_F=100mA

V_R=10V

V_F3

Reverse current

I_R

µA

www.rohm.com

2009.02 - Rev.D

1/3

12 3 4

中文翻译

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