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RB411 PDF预览

RB411

更新时间: 2024-11-30 22:24:23
品牌 Logo 应用领域
美微科 - MCC 肖特基二极管
页数 文件大小 规格书
2页 137K
描述
20 to 40 Volts 0.5 Amp Surface Mount Schottky Barrier Diode

RB411 数据手册

 浏览型号RB411的Datasheet PDF文件第2页 
M C C  
RB400D  
THRU  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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RB411D  
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Features  
·
·
·
Low Turn-on Voltage  
Fast Switching  
0.5 AmpSurface Mount  
Schottky Barrier Diode  
20 to 40 Volts  
PN Junction Guard Ring for Transient and ESD Protection  
Mechanical Data  
·
·
·
·
·
Case :SOT-346,Molded Plastic  
Terminals :Solderable per MIL-STD-202,Method 208  
Polarity :See Diagrams Below  
Weight :0.008 grams (approx)  
Mountion Position :Any  
SOT-346  
A
L
3
3
2
S
B
2
1
CATHODE  
ANODE  
Maximum Ratings  
Operating Temperature: -25°C to +125°C  
Storage Temperature: -50°C to +125°C  
D
G
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
J
C
K
H
DIMENSIONS  
RB411 D  
RB400 D  
05T  
05F  
20V  
40V  
14V  
28V  
40V  
INCHES  
MM  
DIM  
A
B
C
D
G
H
J
MIN  
.106  
.051  
.039  
.014  
.067  
.000  
.004  
.008  
.049  
.089  
MAX  
.122  
.067  
.051  
.020  
.091  
.004  
.010  
.024  
.065  
.118  
MIN  
2.70  
1.30  
1.00  
0.35  
1.70  
0.00  
0.10  
0.20  
1.25  
2.25  
MAX  
3.10  
1.70  
1.30  
0.50  
2.30  
0.10  
0.26  
0.60  
1.65  
3.00  
NOTE  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
K
L
S
IF(AV)  
0.5A  
TA = 9C  
Peak Forward Surge  
Current  
Maximum Forward  
Voltage Drop Per  
IFSM  
3A  
8.3ms, half sine  
Suggested Solder  
Pad Layout  
.031  
.800  
Element  
RB411D  
RB400D  
.039  
1.000  
IFM = 0.5A  
TJ = 25°C  
VF  
0.45V  
0.53V  
0.098-0.118  
2.5-3.0  
.094  
2.400  
inches  
mm  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
100mA TJ = 25°C  
4.0mA  
TJ = 100°C  
.037  
.950  
.037  
.950  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

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