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RB411DS-TP-HF PDF预览

RB411DS-TP-HF

更新时间: 2024-12-01 13:02:15
品牌 Logo 应用领域
美微科 - MCC 肖特基二极管
页数 文件大小 规格书
2页 137K
描述
Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon,

RB411DS-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.2其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:125 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

RB411DS-TP-HF 数据手册

 浏览型号RB411DS-TP-HF的Datasheet PDF文件第2页 
M C C  
RB400D  
THRU  
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RB411D  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
·
·
·
Low Turn-on Voltage  
Fast Switching  
0.5 AmpSurface Mount  
Schottky Barrier Diode  
20 to 40 Volts  
PN Junction Guard Ring for Transient and ESD Protection  
Mechanical Data  
·
·
·
·
·
Case :SOT-346,Molded Plastic  
Terminals :Solderable per MIL-STD-202,Method 208  
Polarity :See Diagrams Below  
Weight :0.008 grams (approx)  
Mountion Position :Any  
SOT-346  
A
L
3
3
2
S
B
2
1
CATHODE  
ANODE  
Maximum Ratings  
Operating Temperature: -25°C to +125°C  
Storage Temperature: -50°C to +125°C  
D
G
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
J
C
K
H
DIMENSIONS  
RB411 D  
RB400 D  
05T  
05F  
20V  
40V  
14V  
28V  
40V  
INCHES  
MM  
DIM  
A
B
C
D
G
H
J
MIN  
.106  
.051  
.039  
.014  
.067  
.000  
.004  
.008  
.049  
.089  
MAX  
.122  
.067  
.051  
.020  
.091  
.004  
.010  
.024  
.065  
.118  
MIN  
2.70  
1.30  
1.00  
0.35  
1.70  
0.00  
0.10  
0.20  
1.25  
2.25  
MAX  
3.10  
1.70  
1.30  
0.50  
2.30  
0.10  
0.26  
0.60  
1.65  
3.00  
NOTE  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
K
L
S
IF(AV)  
0.5A  
TA = 9C  
Peak Forward Surge  
Current  
Maximum Forward  
Voltage Drop Per  
IFSM  
3A  
8.3ms, half sine  
Suggested Solder  
Pad Layout  
.031  
.800  
Element  
RB411D  
RB400D  
.039  
1.000  
IFM = 0.5A  
TJ = 25°C  
VF  
0.45V  
0.53V  
0.098-0.118  
2.5-3.0  
.094  
2.400  
inches  
mm  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
100mA TJ = 25°C  
4.0mA  
TJ = 100°C  
.037  
.950  
.037  
.950  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

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