RB411VA-50_12 PDF预览

RB411VA-50_12

更新时间: 2025-08-18 09:37:55
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
4页 507K
描述
Schottky Barrier Diode

RB411VA-50_12 数据手册

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Schottky Barrier Diode  
RB411VA-50  
Applications  
Dimensions (Unit : mm)  
Land size figure (Unit : mm)  
General rectification  
1.1  
0.17±0.1  
ꢀꢀ 0.05  
1.3±0.05  
Features  
1) Small mold type. (TUMD2)  
2) High reliability.  
TUMD2  
Construction  
Silicon epitaxial planar  
Structure  
0.8±0.05  
0.6±0.2  
ꢀꢀꢀ 0.1  
ROHM : TUMD2  
dot (year week factory) + day  
Taping specifications (Unit : mm)  
φ1.55±0.1  
ꢀꢀꢀꢀꢀ 0  
0.25±0.05  
2.0±0.05  
4.0±0.1  
4.0±0.1  
φ1.0±0.2  
ꢀꢀꢀꢀꢀ0  
1.43±0.05  
0.9±0.08  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
Symbol  
VRM  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
50  
20  
0.5  
3
VR  
V
Average rectified forward current  
Forward current surge peak (60Hz1cyc)  
Junction temperature  
Io  
IFSM  
A
A
125  
Tj  
°C  
°C  
Storage temperature  
Tstg  
40 to 125  
Electrical characteristics (Ta=25°C)  
Parameter  
Conditions  
IF=500mA  
Symbol  
VF1  
Min.  
Typ.  
Max.  
0.50  
0.30  
30  
Unit  
V
-
-
-
-
-
-
Forawrd voltage  
VF2  
V
IF=10mA  
IR  
Reverse current  
-
μA  
pF  
VR=10V  
VR=10V , f=1MHz  
Capacitance between terminals  
Ct  
20  
-
www.rohm.com  
2012.03 - Rev.C  
1/3  
©2012 ROHM Co., Ltd. All rights reserved.  

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