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RB421D PDF预览

RB421D

更新时间: 2024-12-01 03:37:55
品牌 Logo 应用领域
TRSYS 二极管
页数 文件大小 规格书
1页 72K
描述
Schottky barrier Diodes

RB421D 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.42Base Number Matches:1

RB421D 数据手册

  
SOT-23-3L  
-
RB421D Schottky barrier Diodes  
+
FEATURES  
z Small surface mounting type  
z Low reverse current and low forward voltage  
z High reliability  
2. 80¡ À0. 05  
1. 60¡ À0. 05  
Marking: D3C  
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25  
Parameter  
Peak reverse voltage  
DC reverse voltage  
Symbol  
VRM  
VR  
Limits  
40  
Unit  
V
40  
V
Mean rectifying current  
Peak forward surge current  
Junction temperature  
Storage temperature  
IO  
100  
mA  
A
IFSM  
Tj  
1
125  
Tstg  
-40~+125  
Electrical Ratings @TA=25  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
IF=100mA  
VF1  
VF2  
IR  
0.55  
0.34  
30  
V
V
Forward voltage  
IF=10mA  
µA  
Reverse current  
VR=10V  
Capacitance between terminals  
CT  
6
pF  
VR=10V, f=1MHZ  

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