Datasheet > RB157

RB157

更新时间： 2024-09-27 14:52:03

品牌	Logo	应用领域
鲁光 - LGE		普通整流桥
页数	文件大小	规格书
2页	1410K
描述
普通整流桥

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中文翻译

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技术参数
数据手册

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RB157 技术参数

Package：	RB-15	Maximum recurrent peak reverse voltage：	1000
Maximum average forward rectified current：	1.5	Peak forward surge current：	50
Maximum instantaneous forward voltage：	1	Maximum reverse current：	5
TJ(℃）：	-55～+150

RB157 数据手册

RB151-RB157

SILICON BRIDGE RECTIFIERS

RB-15

.150(3.8)

.130(3.3)

.360(9.1)

.340(8.6)

RB15

FEATURES

.305(7.75)

.265(6.73)

.395(10.0)

.355(9.0)

.220(6.73)

.180(4.6)

.340(8.6)

.300(7.6)

WOM

Rating to 1000V PRVP

Surge overload rating to 40 Amperes peak

Glass passivated chip junctions

MIN

1.27(32.3)

1.20(30.5)

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

Lead solderable per MIL-STD-202 method 208

Lead: silver plated copper, solderde plated

Plastic material has UL flammability classification94V-O

.032(.81)

.028(.71)

DIA

.220

POS.

LEAD

.180

.220

.180

(5.6)

(4.6)

(5.6)

(4.6)

inch(mm)

Maximum Ratings ^{(@TA = 25°C unless otherwise specified)}

Characteristic

Symbol RB151

RB152

RB153

RB154

RB155

RB156

RB157

UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Reverse Voltage

Maximum DC Blocking Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

100

1000

Maximum average forward Output current

@T_A=40℃

I_F(AV)

1.5

Peak forward surge current

8.3ms single half-sine-wave

superimposed on rated load

I_FSM

A²S

I²t

I²t Rating for fusing @Tj=25℃

Thermal Characteristics

Characteristic

Symbol

RB151

RB152

RB153

RB154

RB155

RB156

RB157 UNITS

Operating junction temperature range

Storage temperature range

T_J

-55 -- +150

℃

T_STG

Electrical Characteristics ^{(@TA = 25°C unless otherwise specified)}

Characteristic

Symbol

RB151

RB152

RB153

RB154

RB155

RB156

RB157 UNITS

Maximum instantaneous forward voltage

at 1.5A

V_F

1.0

Maximum reverse current @T_A=25℃

at rated DC blocking voltage @T_A=100℃

5 . 0

μ A

I_R

0.5

m A

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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