Datasheet > RB160A60_1

RB160A60_1

更新时间： 2024-11-02 03:37:55

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	112K
描述
Schottky barrier diode

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中文翻译

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RB160A60_1 数据手册

RB160A60

Diodes

Schottky barrier diode

RB160A60

zApplications

zDimensions (Unit : mm)

General rectification

CATHODEꢀBAND

φ0.6±0.1

29±1

zFeatures

1) Cylindrical mold type. (MSR)

2) High I surge capability.

3) Low V^F.

3.0±0.2

29±1

φ2.5±0.2

4) High ESD.

ROHM : MSR

①

②

Manufacture Date

zConstruction

zTaping specifications (Unit : mm)

Silicon epitaxial planar

BROWN

Standard dimension

value(mm)

Symbol

BLUE

T-31 ꢀ 52.4±1.5

+0.4

Ａ

T-32

26.0

T-31 ꢀ 5.0±0.5

T-31

T-32

T-31

T-32

T-31

T-32

T-31

T-32

T-31

T-32

T-31

T-32

T-31

T-32

5.0±0.3

1.0 max.

1/2A±1.2

1/2A±0.4

±0.7

Ｆ

0.2 max.

6.0±0.5

5.0±0.5

1.5 max.

0.4 max.

|L1-L2|

＊H1(6mm)：BROWN

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current (*1)

Forward current surge peak （t=100µs）

Junction temperature

I_FSM

150

℃

Storage temperature

-55 to +150

Tstg

(*1) Mounted on epoxy board. 180°Half sine wave

zElectrical characteristic (Ta=25°C)

Parameter

Conditions

Symbol

Min.

0.4

Typ.

0.5

7.00

Max.

0.55

Unit

Forward voltage

V_F

I_F=1.0A

V_R=60V

C=100pF,R=1.5kΩ, forward and reverse : 1 times

I_R

Reverse current

µA

ESD break down voltage

ESD

Rev.B

1/3

12 3 4

中文翻译

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