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RB157G PDF预览

RB157G

更新时间: 2024-11-24 03:37:55
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
2页 79K
描述
SILICON BRIDGE RECTIFIERS

RB157G 数据手册

 浏览型号RB157G的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
RB151(G)---RB157(G)  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.5 A  
SILICON BRIDGE RECTIFIERS  
FEATURES  
Rating to 1000V PRV  
WOM  
A
B
Surge overload rating to 50 Amperes peak  
Ideal for printed circuit board  
.150(3.8)  
.130(3.3)  
.360(9.1)  
.340(8.6)  
RB15  
WO  
B
.305(7.75)  
.265(6.73)  
.395(10.0)  
.355(9.0)  
.220(6.73)  
.180(4.6)  
.340(8.6)  
.300(7.6)  
WOM  
A
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive product  
Mounting Position: Any  
MIN  
MIN  
1.27(32.3)  
1.20(30.5)  
Glass passivated chip junctions  
.032(.81)  
.028(.71)  
DIA  
.220  
POS.  
LEAD  
.180  
.220  
.180  
(5.6)  
(4.6)  
(5.6)  
(4.6)  
inch(mm)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
RB151 RB152 RB153 RB154 RB155 RB156 RB157 UNITS  
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
V
V
Maximum DC blocking voltage  
Maximum average forw ard  
100  
1000  
A
1.5  
IF(AV)  
Output current  
@TA=55  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
A
IFSM  
50.0  
1.0  
Maximum instantaneous forw ard voltage  
@ 1.5 A  
V
VF  
IR  
A
μ
Maximum reverse current  
@TA=25  
10.0  
mA  
at rated DC blocking voltage @TA=100  
Operating junction temperature range  
Storage temperature range  
0.5  
- 55 ---- + 125  
TJ  
TSTG  
- 55 ---- + 150  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0287012  

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