5秒后页面跳转
QPD1018S2 PDF预览

QPD1018S2

更新时间: 2024-01-26 14:45:41
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
17页 1827K
描述
500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET

QPD1018S2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.76JESD-609代码:e4
湿度敏感等级:3峰值回流温度(摄氏度):260
端子面层:GOLD OVER NICKEL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

QPD1018S2 数据手册

 浏览型号QPD1018S2的Datasheet PDF文件第1页浏览型号QPD1018S2的Datasheet PDF文件第2页浏览型号QPD1018S2的Datasheet PDF文件第4页浏览型号QPD1018S2的Datasheet PDF文件第5页浏览型号QPD1018S2的Datasheet PDF文件第6页浏览型号QPD1018S2的Datasheet PDF文件第7页 
QPD1018  
500W, 50V, 2.7 3.1 GHz, GaN RF IMFET  
RF Characterization 2.7 3.1 GHz EVB Performance At 2.7 GHz1  
Parameter  
Linear Gain, GLIN  
Min  
Typ  
16.6  
56.7  
Max  
Units  
dB  
Output Power at 3dB compression point, P3dB  
dBm  
Power-Added Efficiency at 3dB compression point,  
PAE3dB  
Gain at 3dB compression point, G3dB  
64.4  
13.6  
%
dB  
Notes:  
1. VD = +50V, IDQ = 750mA, Temp = 25°C, 100 uS PW, 10% DC  
RF Characterization 2.7 3.1 GHz EVB Performance At 2.9 GHz1  
Parameter  
Linear Gain, GLIN  
Min  
Typ  
16.8  
56.6  
Max  
Units  
dB  
Output Power at 3dB compression point, P3dB  
dBm  
Power-Added Efficiency at 3dB compression point,  
PAE3dB  
Gain at 3dB compression point, G3dB  
57.1  
13.8  
%
dB  
Notes:  
1. VD = +50V, IDQ = 750mA, Temp = 25°C, 100 uS PW, 10% DC  
RF Characterization 2.7 3.1 GHz EVB Performance At 3.1 GHz1  
Parameter  
Linear Gain, GLIN  
Min  
Typ  
15.4  
56.8  
Max  
Units  
dB  
Output Power at 3dB compression point, P3dB  
dBm  
Power-Added Efficiency at 3dB compression point,  
PAE3dB  
Gain at 3dB compression point, G3dB  
56.0  
12.4  
%
dB  
Notes:  
1. VD = +50V, IDQ = 750mA, Temp = 25°C, 100 uS PW, 10% DC  
RF Characterization Mismatch Ruggedness at 2.9 GHz1  
Symbol Parameter  
dB Compression  
Typical  
VSWR  
Impedance Mismatch Ruggedness  
3
10:1  
Notes:  
1. Test conditions unless otherwise noted: TA = 25°C, VD = 50 V, IDQ = 750 mA, 100 uS PW, 10% DC.  
2. Driving input power is determined at pulsed compression under matched condition at EVB output connector.  
3. No spur detected down to the noise floor of Spectrum Analyzer from 1 15GHz at TA = -40°C.  
Datasheet Rev. A, Jun 9, 2017 | Subject to change without notice  
www.qorvo.com  
- 3 of 17 -  

与QPD1018S2相关器件

型号 品牌 获取价格 描述 数据表
QPD1019 TRIQUINT

获取价格

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
QPD1019EVB01 TRIQUINT

获取价格

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
QPD1019S2 TRIQUINT

获取价格

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
QPD1020 TRIQUINT

获取价格

2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020EVB01 TRIQUINT

获取价格

2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020S2 TRIQUINT

获取价格

2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020SQ TRIQUINT

获取价格

2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020SR TRIQUINT

获取价格

2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1022 TRIQUINT

获取价格

10W, 32V, DC – 12 GHz, GaN RF Transistor
QPD1022EVB01 TRIQUINT

获取价格

10W, 32V, DC – 12 GHz, GaN RF Transistor