Datasheet > PZTA94

PZTA94

更新时间： 2023-12-06 20:07:42

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	734K
描述
SOT-223

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中文翻译

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数据手册

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PZTA94 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223(8R) Plastic-Encapsulate Transistors

SOT-223

PZTA94 TRANSISTOR (PNP)

FEATURES

High Voltage Driver Applications

1. BASE



2. COLLECTOR

3. EMITTER

MARKING:

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

-400

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Current- Pulsed

-0.2

-0.3

I_CM

P_C

Collector Power Dissipation

R_θJA

T_J,T_stg

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

125

℃/W

℃

-55~150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-400

-5

Typ

Max

Unit

V_(BR)CBOI_C=-0.1mA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-0.1mA,I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_CEO

V_CB=-400V,I_E=0

-100

-5

μA

V_CE=-400V,I_B=0

Collector cut-off current

I_EBO

V_EB=-4V, I_C=0

-100

300

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C=-1mA

V_CE=-10V, I_C=-100mA

V_CE=-10V, I_C=-50mA

I_C=-10mA,I_B=-1mA

I_C=-50mA,I_B=-5mA

I_C=-10mA,I_B=-1mA

VCE=-20V,IC=-10mA, f=30MHz

DC current gain

-0.2

-0.3

V_CE(sat)

Collector-emitter saturation voltage

V_BE(sat)

f_T

-0.75

Base-emitter saturation voltage

Transition frequency

MHz

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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