Datasheet > PZTA96S

PZTA96S

更新时间： 2024-02-27 17:33:18

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管高压
页数	文件大小	规格书
1页	39K
描述
High Voltage Transistor

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中文翻译

获取价格

技术参数
数据手册

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PZTA96S 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.9	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	50
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1.5 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

PZTA96S 数据手册

SMD Type

Transistors

High Voltage Transistor

PZTA96S

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

+0.2

0.90

-0.2

+0.1

3.00

-0.1

PNP Silicon

+0.3

7.00

-0.3

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Symbol

V^CEO

V^CBO

V^EBO

I^C

Rating

-450

Unit

-450

-5

-500

P^D

1.5

Watts

Total Power Dissipation Up to T^A= 25

Storage Temperature Range

Junction Temperature

T^stg

-65 to +150

150

Thermal Resistance from Junction to Ambient *

RèJA

83.3

* Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.;

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CEO

V^(BR)CBO

V^(BR)EBO

I^CBO

Testconditons

IC = -1.0 mA, IB = 0

Min

-450

-5.0

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector–Base Cutoff Current

Emitter–Base Cutoff Current

DC Current Gain*

IC = -100 ìA,IE = 0

IE = -10ìA, IC = 0

VCB = -400 V, IE = 0

VBE = -4.0 V, IC = 0

-0.1

150

-0.6

-1.0

ìA

I^EBO

h^FE

IC = -10 mA, VCE =-10 V

IC = -20 mA, IB =-2.0 mA

IC = -20 mA, IB = -2.0 mA

V^CE(sat)

V^BE(sat)

Saturation Voltages

* Pulse Test: Pulse Width

300 ìs; Duty Cycle = 2.0%.

Marking

ZTA96

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中文翻译

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