Datasheet > PZTA94

PZTA94

更新时间： 2024-09-28 10:19:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	712K
描述
Epitaxial Planar Transistor

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PZTA94 数据手册

PZTA94

PNP Transistor

Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

SOT-223

Description

The PZTA94 is designed for application

requires high voltage.

Features

*High Current Gain: IC=300mA at 25 ^oC

*High Voltage: VCEO=400V (min) at IC=1mA

*Complementary With PZTA44

Millimeter

Min. Max.

13̓TYP.

2.30 REF.

Millimeter

REF.

Min.

Max.

7.30

3.10

0.10

10̓

6.70

2.90

0.02

0̓

6.30

6.70

3.70

1.80

A 9 4

6.30

3.30

1.40

Date Code

0.60

0.25

0.80

0.35

Ta=25

MAXIMUM RATINGS

ABSOLUTE

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

-400

-6

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-500

Total Power Dissipation

Storage Temperature

-55~+150

Junction and

TJ,

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Symbol

BVCBO

BVCEO

BVEBO

Min

-400

-6

Max

Test Conditions

IC=-100µA,IE=0

IC=-1mA,IB=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

IE=-100µA,IC=0

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

Collector-Base Cutoff Current

ICBO

IEBO

ICES

-100

VCB=-400V,IE=0

VBE=-6 V,IC=0

-500

-350

-500

-750

VCE=-400V,VBE=0

IC=- 1mA,IB=-0.1mA

IC=- 10mA,IB=-1 mA

IC=- 50mA,IB=-5 mA

*VCE(sat)1

*VCE(sat)2

Collector Saturation Voltage

Base Satruation Voltage

*VCE(sat)3

VBE(sat)

IC=-

10mA,IB=-1 mA

*hFE1

*hFE2

*hFE3

*hFE4

VCE=-10V, IC=-1mA

300

VCE=-10V, IC=-10 mA

VCE=-10V, IC=-50 mA

VCE=-10V, IC=-100mA

DC Current Gain

≦

*Pulse width 380 s, Duty Cycle 2%

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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