5秒后页面跳转
PXFC192207FHV3R0 PDF预览

PXFC192207FHV3R0

更新时间: 2024-09-21 01:05:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1058K
描述
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz

PXFC192207FHV3R0 数据手册

 浏览型号PXFC192207FHV3R0的Datasheet PDF文件第2页浏览型号PXFC192207FHV3R0的Datasheet PDF文件第3页浏览型号PXFC192207FHV3R0的Datasheet PDF文件第4页浏览型号PXFC192207FHV3R0的Datasheet PDF文件第5页浏览型号PXFC192207FHV3R0的Datasheet PDF文件第6页浏览型号PXFC192207FHV3R0的Datasheet PDF文件第7页 
PXFC192207FH  
Thermally-Enhanced High Power RF LDMOS FET  
220 W, 28 V, 1805 – 1990 MHz  
Description  
The PXFC192207FH is a 220-watt LDMOS FET intended for use  
in multi-standard cellular power amplifier applications in the 1805  
to 1990 MHz frequency band. Features include input and output  
matching, high gain and thermally-enhanced package with earless  
flanges. Manufactured with Infineon's advanced LDMOS process,  
this device provides excellent thermal performance and superior  
reliability.  
PXFC192207FH  
Package H-37288G-4/2  
Features  
Two-carrier WCDMA Drive-up  
VDD = 28 V,IDQ = 1600 mA,  
3GPP WCDMA signal, PAR = 8 dB,  
10 MHz carrier spacing, BW 3.84 MHz  
Broadband input and output matching  
Typical Pulsed CW performance, 1990 MHz, 28 V,  
16 µs pulse width, 10 % duty cycle, class AB  
- Output power at P  
- Efficiency = 55%  
- Gain = 20 dB  
= 220 W  
1dB  
30  
25  
20  
15  
10  
5
60  
50  
40  
30  
20  
10  
0
1930 MHz  
1960 MHz  
1990 MHz  
Typical single-carrier WCDMA performance, 1990  
MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR  
- Output power = 50 W  
- Efficiency = 29%  
- Gain = 20 dB  
Gain  
- ACPR = –34 dBc @ 5 MHz  
Capable of handling 10:1 VSWR @28 V, 220 W  
(CW) output power  
Efficiency  
40  
Integrated ESD protection : Human Body Model,  
Class 1C (per JESD22-A114)  
0
c192207fh_g1  
30  
35  
45  
50  
55  
Low thermal resistance  
Output Power (dBm)  
Pb-free and RoHS compliant  
RF Characteristics  
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)  
= 28 V, I = 1600 mA, P = 50 W avg, ƒ = 1980 MHz, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,  
V
DD  
DQ  
OUT  
1
2
peak/average = 8 dB @ 0.01% CCDF  
Characteristic  
Linear Gain  
Symbol  
Min  
19  
Typ  
20.5  
32  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
29  
%
Intermodulation Distortion  
IMD  
–32.5  
–29  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 9  
Rev. 04.1, 2016-06-22  

与PXFC192207FHV3R0相关器件

型号 品牌 获取价格 描述 数据表
PXFC192207FHV3R0XTMA1 INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R250 INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R250XTMA1 INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207SH INFINEON

获取价格

Broadband internal input and output matching
PXFC193808SVV1R250 INFINEON

获取价格

RF Power Field-Effect Transistor
PXFC193808SVV1R250XTMA1 INFINEON

获取价格

RF Power Field-Effect Transistor,
PXFC211507SC INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FET 15
PXFC211507SCV1R250 INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FET 15
PXFC211507SCV1R250XTMA1 INFINEON

获取价格

Power Field-Effect Transistor,
PXFC212551SC INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FET