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PXFC193808SVV1R250 PDF预览

PXFC193808SVV1R250

更新时间: 2024-09-20 19:50:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 185K
描述
RF Power Field-Effect Transistor

PXFC193808SVV1R250 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.7
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

PXFC193808SVV1R250 数据手册

 浏览型号PXFC193808SVV1R250的Datasheet PDF文件第2页浏览型号PXFC193808SVV1R250的Datasheet PDF文件第3页浏览型号PXFC193808SVV1R250的Datasheet PDF文件第4页浏览型号PXFC193808SVV1R250的Datasheet PDF文件第5页浏览型号PXFC193808SVV1R250的Datasheet PDF文件第6页浏览型号PXFC193808SVV1R250的Datasheet PDF文件第7页 
PXFC193808SV  
Thermally-Enhanced High Power RF LDMOS FET  
380 W, 28 V, 1805 – 1880 MHz  
Description  
The PXFC193808SV is a 380-watt LDMOS FET intended for use in  
multi-standard cellular power amplifier applications in the 1805 to 1880  
MHz frequency band. Features include input and output matching,  
high gain and a thermally-enhanced package with earless flange.  
PXFC193808SV  
Package H-37275G-6/2  
Manufactured with Infineon's advanced LDMOS process, this device  
provides excellent thermal performance and superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz  
Broadband internal input and output matching  
3GPP WCDMA signal,  
Typical pulsed CW performance, 1842.5 MHz, 28 V,  
10 dB PAR, 3.84 MHz bandwidth  
- Output power at P  
= 380 W  
1dB  
- Efficiency = 54.9%  
- Gain = 21 dB  
24  
20  
16  
12  
8
60  
40  
20  
0
Integrated ESD protection  
Gain  
ESD: Human Body Model, Class 2 (per ANSI/  
ESDA/JEDEC JS-001)  
Efficiency  
Capable of handling 10:1 VSWR @28 V, 200 W  
(1-C WCDMA) output power  
Low thermal resistance  
-20  
-40  
-60  
Pb-free and RoHS compliant  
PAR @ 0.01% CCDF  
4
c193808sv-gr1c  
0
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 2880 mA, P = 80 W avg, ƒ = 1880 MHz.  
V
DD  
DQ  
OUT  
3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.  
Characteristic  
Gain  
Symbol  
Min  
19.5  
28.5  
Typ  
21  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
Adjacent Channel Power Ratio  
ηD  
30.3  
–33.5  
%
ACPR  
–32  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 10  
Rev. 02.1, 2015-01-13  

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