Datasheet > PXFC212551SC_15

PXFC212551SC_15

更新时间： 2024-09-21 01:21:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	895K
描述
Thermally-Enhanced High Power RF LDMOS FET

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PXFC212551SC_15 数据手册

PXFC212551SC

Thermally-Enhanced High Power RF LDMOS FET

240 W, 28 V, 2110 – 2170 MHz

Description

PXFC212551SC

Package H-37248H-2

The PXFC212551SC is a 240-watt LDMOS FET intended for use

in multi-standard cellular power ampliﬁer applications in the 2110

to 2170 MHz frequency band. Features include input and output

matching, high gain and thermally-enhanced package with earless

ﬂanges. Manufactured with Inﬁneon's advanced LDMOS process,

this device provides excellent thermal performance and superior

reliability.

Features

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1600 mA

ƒ = 2165 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

•ꢀ Broadband internal input and output matching

•ꢀ Typical Pulsed CW performance, 2140 MHz, 28 V,

10 µs pulse width, 10% duty cycle, Class AB

- Output power at P

- Efﬁciency = 50%

- Gain = 19 dB

= 240 W

1dB

Gain

•ꢀ Capable of handling 10:1 VSWR @28 V, 240 W

(CW) output power

•ꢀ Integrated ESD protection

•ꢀ Human Body Model Class 2 (per ANSI/ESDA/

Efficiency

JEDEC JS-001)

•ꢀ Low thermal resistance

•ꢀ Pb-free and RoHS compliant

pxfc212551sc_g1

Output Power (dBm)

RF Characteristics

Two-carrier WCDMA Specifications (tested in Infineon test fixture)

= 28 V, I = 1600 mA, P = 50 W avg, ƒ = 2160 MHz, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

Typ

20.5

Max

—

Unit

Drain Efﬁciency

Intermodulation Distortion

h_D

—

IMD

—

–31

–27

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 03.1, 2015-04-13

12 3 4 5 6 7 8

中文翻译

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