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PXFC211507SCV1R250 PDF预览

PXFC211507SCV1R250

更新时间: 2024-11-09 01:22:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 201K
描述
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz

PXFC211507SCV1R250 数据手册

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PXFC211507SC  
Thermally-Enhanced High Power RF LDMOS FET  
150 W, 28 V, 2110 – 2170 MHz  
Description  
The PXFC211507SC is a 150-watt LDMOS FET intended for use  
in multi-standard cellular power amplifier applications in the 2110  
to 2170 MHz frequency band. Features include input and out-  
put matching, high gain and a thermally-enhanced package with  
earless flanges. Manufactured with Infineon's advanced LDMOS  
process, this device provides excellent thermal performance and  
superior reliability.  
PXFC211507SC  
Package H-37248G-4/2  
(formed leads)  
Features  
Two-carrier WCDMA Drive-up  
VDD = 28 V, VGS = 2.6 V,  
IDQ = 960 mA, ƒ = 2115 MHz,  
3GPP WCDMA signal, 8 dB PAR,  
10 MHz carrier spacing, 3.84 MHz BW  
Broadband internal input and output matching  
Typical Pulsed CW performance, 2170 MHz, 28 V,  
10 µs pulse width, 10% duty cycle  
- Output power at P  
- Efficiency = 56%  
- Gain = 19 dB  
= 150 W  
21  
20  
19  
18  
17  
16  
15  
14  
56  
48  
40  
32  
24  
16  
8
1dB  
Gain  
Typical single-carrier WCDMA performance, 2170  
MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model  
1 with 64DPCH  
- Output power = 32 W  
- Efficiency = 32%  
- Gain = 20 dB  
Capable of handling 10:1 VSWR @28 V, 150 W  
(CW) output power  
Efficiency  
Integrated ESD protection  
c211507sc-gr1a  
0
ESD Rating: Human Body Model, Class 2 (per  
ANSI/ESDA/JEDEC JS-001  
29  
33  
37  
41  
45  
49  
53  
Output Power (dBm)  
Low thermal resistance  
Pb-free and RoHS compliant  
RF Characteristics  
Two-carrier WCDMA Specifications (tested in Infineon test fixture)  
= 28 V, I = 960 mA, P = 32 W avg, ƒ = 2160 MHz, ƒ = 2170 MHz, 3GPP WCDMA signal, 3.84 MHz channel  
V
DD  
DQ  
OUT  
1
2
bandwidth, 8 dB peak/average @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
19  
Typ  
20.4  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
Intermodulation Distortion  
D  
29  
32.9  
%
IMD  
–30.5  
–28  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 9  
Rev. 02, 2015-03-03  

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