PXFC211507SC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 2110 – 2170 MHz
Description
The PXFC211507SC is a 150-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and out-
put matching, high gain and a thermally-enhanced package with
earless flanges. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXFC211507SC
Package H-37248G-4/2
(formed leads)
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, VGS = 2.6 V,
IDQ = 960 mA, ƒ = 2115 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
•
•
Broadband internal input and output matching
Typical Pulsed CW performance, 2170 MHz, 28 V,
10 µs pulse width, 10% duty cycle
- Output power at P
- Efficiency = 56%
- Gain = 19 dB
= 150 W
21
20
19
18
17
16
15
14
56
48
40
32
24
16
8
1dB
Gain
•
•
Typical single-carrier WCDMA performance, 2170
MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model
1 with 64DPCH
- Output power = 32 W
- Efficiency = 32%
- Gain = 20 dB
Capable of handling 10:1 VSWR @28 V, 150 W
(CW) output power
Efficiency
•
•
Integrated ESD protection
c211507sc-gr1a
0
ESD Rating: Human Body Model, Class 2 (per
ANSI/ESDA/JEDEC JS-001
29
33
37
41
45
49
53
Output Power (dBm)
•
•
Low thermal resistance
Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
= 28 V, I = 960 mA, P = 32 W avg, ƒ = 2160 MHz, ƒ = 2170 MHz, 3GPP WCDMA signal, 3.84 MHz channel
V
DD
DQ
OUT
1
2
bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
19
Typ
20.4
Max
—
Unit
dB
G
ps
Drain Efficiency
Intermodulation Distortion
D
29
32.9
—
%
IMD
—
–30.5
–28
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 9
Rev. 02, 2015-03-03