Datasheet > PXFC192207SH

PXFC192207SH

更新时间： 2024-09-21 00:33:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1072K
描述
Broadband internal input and output matching

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PXFC192207SH 数据手册

PXFC192207SH

Thermally-Enhanced High Power RF LDMOS FET

220 W, 28 V, 1805 – 1990 MHz

Description

PXFC192207SH

Package H-37288G-4/2

The PXFC192207SH is a 220-watt LDMOS FET intended for

use in multi-standard cellular power amplifier applications in

the 1805 to 1990 MHz frequency band. Features include input

and output matching, high gain and thermally-enhanced pack-

age with earless flanges. Manufactured with Infineon's ad-

vanced LDMOS process, this device provides excellent thermal

performance and superior reliability.

Features

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1600 mA, V_GS= 2.75 V,

ƒ = 1880 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

•

Broadband internal input and output matching

Typical Pulsed CW performance, 1880 MHz, 28 V,

10 µs pulse width, 10% duty cycle, class AB

- Output power at P

- Efﬁciency = 55%

- Gain = 20 dB

= 220 W

1dB

Gain

•

Typical single-carrier WCDMA performance, 1880

MHz, 28 V, 10 dB PAR @ 0.01% CCDF

- Output power = 50 W

- Efﬁciency = 29%

- Gain = 20 dB

- ACPR = –34 dBc @5 MHz

•

Capable of handling 10:1 VSWR @28 V, 200 W

(CW) output power

Efficiency

•

Integrated ESD protection

Low thermal resistance

c192207sh_g1

Pb-free and RoHS compliant

Output Power (dBm)

RF Characteristics

Two-carrier WCDMA Speciﬁcations (tested in Inﬁneon production test ﬁxture)

= 28 V, I = 1600 mA, P = 50 W avg, ƒ = 1980 MHz, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

Typ

Max

—

Unit

Drain Efﬁciency

Intermodulation Distortion

h_D

30.5

–32

—

IMD

—

–29

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 02, 2014-10-31

12 3 4 5 6 7 8

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