Datasheet > PXAC241002FCV1R2

PXAC241002FCV1R2

更新时间： 2024-11-25 01:05:35

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
8页	279K
描述
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 â 2400 MHz

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PXAC241002FCV1R2 数据手册

PXAC241002FC

Thermally-Enhanced High Power RF LDMOS FET

100 W, 28 V, 2300 – 2400 MHz

Description

The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric

design, intended for use in multi-stantdard cellular power ampliﬁer

applications in the 2300 to 2400 MHz frequency band. Features in-

clude dual-path design, input and output matching, high gain and a

thermally-enhanced package with earless ﬂange. Manufactured with

Wolfspeed's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability.

PXAC241002FC

Package H-37248C-4

Features

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ(main)= 230 mA,

•

Broadband internal input and output matching

Asymmetric Doherty design

_GS(peak)= 1.5 V, ƒ = 2400 MHz

3GPP WCDMA signal,

ergoqhgorgn'

- Main: P

- Peak: P

= 40 W Typ

= 60 W Typ

1dB

10 dB PAR, 3.84 MHz bandwidth

qpjgfq4po5g

•

Typical Pulsed CW performance, 2400 MHz, 28 V,

160 µsec pulse width, 10% duty cycle (Doherty

conﬁguration)

Efficiency

Gain

- Output power at P

- Efﬁciency = 53%

- Gain = 15.7 dB

= 34 W

= 81 W

1dB

3dB

-20

-40

-60

PAR @ 0.01% CCDF

•

Capable of handling 10:1 VSWR @28 V, 80 W (CW)

output power

•

Integrated ESD protection

Human Body Model class 1C (per ANSI/ESDA/

JEDEC JS-001)

c241002fc-gr1

•

Low thermal resistance

Pb-free and RoHS compliant

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

= 28 V, I = 230 mA, V = 1.5 V, P = 15 W avg, ƒ = 2400 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

GS(PEAK)

OUT

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

14.8

Typ

15.5

Max

—

Unit

Gain

Drain Efficiency

_D

—

Adjacent Channel Power Ratio

Output PAR@0.01% CCDF

ACPR

OPAR

—

–28

7.6

–26

—

dBc

7.0

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 02, 2018-10-04

4600 Silicon Drive

Durham, NC 27703

www.wolfspeed.com

12 3 4 5 6 7 8

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与PXAC241002FCV1R2相关器件

型号	品牌	获取价格	描述	数据表
PXAC241002FC-V1-R2	CREE	获取价格	Thermally-Enhanced High Power RF LDMOS FET 10
PXAC241702FC	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC241702FCV1R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC241702FCV1R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC241702FCV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC241702FCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC243502FV	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor
PXAC243502FV_15	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor
PXAC243502FV_16	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor 3
PXAC243502FVV1R0	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor 3

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