Datasheet > PXAC243502FVV1R0

PXAC243502FVV1R0

更新时间： 2024-11-06 01:12:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	1371K
描述
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 â 2400 MHz

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PXAC243502FVV1R0 数据手册

PXAC243502FV

High Power RF LDMOS Field Effect Transistor

350 W, 28 V, 2300 – 2400 MHz

Description

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET de-

signed for use in power amplifier applications in the 2300 MHz to

2400 MHz frequency band. Features include an asymmetric design

with high gain and a thermally-enhanced package with earless flange.

Manufactured with Infineon's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

PXAC243502FV

Package H-37275-4

Features

Single-carrier WCDMA

Broadband Performance

V_DD= 28 V, I_DQ= 850 mA, P_OUT= 48.3 dBm,

3GPP WCDMA signal, 10 dB PAR

•ꢀ Asymmetric design

- Main: 150 W P1dB

- Peak: 200 W P1dB

•ꢀ Broadband internal matching

•ꢀ CW performance at 2350 MHz, 28 V

Efficiency

- Ouput power = 250 W P

- Efficiency = 46%

- Gain = 16 dB

1dB

•ꢀ Integrated ESD protection

Gain

•ꢀ Human Body Model Class 2 (per ANSI/ESDA/

JEDEC JS-001)

•ꢀ Low thermal resistance

•ꢀ Pb-free and RoHS-compliant

c243502fv-gr3

2150

2250

2350

2450

2550

Frequency (MHz)

RF Characteristics

Single-carrier WCDMA Specifications (tested in Infineon production test fixture in Doherty configuration)

= 28 V, V = 1.0 V, I = 850 mA, P = 68 W avg, ƒ = 2400 MHz

GS(peak)

OUT

3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

14.0

Typ

15.0

Max

—

Unit

Drain Efﬁciency

Adjacent Channel Power Ratio

h_D

—

ACPR

—

–32

–26

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 03.2, 2016-06-22

12 3 4 5 6 7...10

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