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PXAC261002FC PDF预览

PXAC261002FC

更新时间: 2024-11-21 01:05:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 162K
描述
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz

PXAC261002FC 数据手册

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PXAC261002FC  
Thermally-Enhanced High Power RF LDMOS FET  
100 W, 28 V, 2490 – 2690 MHz  
Description  
The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric  
design intended for use in multi-standard cellular power amplifier  
applications in the 2496 to 2690 MHz frequency band. Features  
include dual-path design, high gain and a thermally-enhanced pack-  
age with earless flanges. Manufactured with Infineon's advanced  
PXAC261002FC  
Package H-37248-4  
LDMOS process, this device provides excellent thermal performance  
and superior reliability.  
Features  
Two-carrier WCDMA Drive-up  
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V,  
ƒ = 2590 MHz, 3GPP WCDMA signal,  
PAR = 8 dB, 10 MHz carrier spacing,  
BW 3.84 MHz, Doherty Fixture  
Broadband internal input and output matching  
Asymmetric design  
- Main: P1dB = 40 W Typ  
- Peak: P1dB = 70 W Typ  
17  
16  
15  
14  
13  
12  
11  
60  
50  
40  
30  
20  
10  
0
Typical Pulsed CW performance, 2590 MHz, 26 V,  
160 µs, 10% duty cycle, Doherty Configuration  
- Output power at P  
- Output power at P  
= 46.5 dBm  
= 50.1 dBm  
Gain  
1dB  
3dB  
Capable of handling 10:1 VSWR @28 V, 100 W  
(CW) output power  
Integrated ESD protection : Human Body Model,  
Class 1C (per JESD22-A114)  
Low thermal resistance  
Efficiency  
Pb-free and RoHS compliant  
c261002fc_g1  
29  
33  
37  
41  
45  
49  
Output Power (dBm)  
RF Characteristics  
Two-carrier WCDMA Specifications (tested in Infineon production Doherty test fixture)  
V
DD  
= 26 V, I  
= 210 mA, P  
= 18 W avg, V  
= 1.4 V, ƒ = 2550 MHz, ƒ = 2590 MHz, 3GPP signal, 3.84 MHz channel  
DQ  
OUT  
GS2  
1
2
bandwidth, 8 dB peak/average @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
14.1  
46  
Typ  
15.1  
49  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
ηD  
%
Intermodulation Distortion  
IMD  
–22  
–21  
dBc  
dB  
Output PAR at 0.01% probability on CCDF  
OPAR  
7.5  
(one-carrier WCDMA, 2585 MHz, 10 dB PAR)  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 8  
Rev. 03.3, 2016-06-15  

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