Datasheet > PXAC241702FC

PXAC241702FC

更新时间： 2024-11-25 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	1206K
描述
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 â 2400 MHz

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PXAC241702FC 数据手册

PXAC241702FC

Thermally-Enhanced High Power RF LDMOS FET

150 W, 28 V, 2300 – 2400 MHz

Description

The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical

design intended for use in multi-standard cellular power amplifier

applications in the 2300 to 2400 MHz frequency band. Features in-

clude dual-path design, high gain and thermally-enhanced package

with earless flange. Manufactured with Infineon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

PXAC241702FC

Package H-37248-4

Features

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 360 mA, ƒ = 2300 MHz

3GPP WCDMA signal,

•ꢀ Asymmetrical Doherty design

- Main: P

- Peak: P

= 60 W Typ

= 90 W Typ

1dB

10 dB PAR, 3.84 MHz BW

•ꢀ Broadband internal input and output matching

Efficiency

•ꢀ Typical pulsed CW performance, 2350 MHz, 28 V,

Doherty configuration

- Output power at P

- Efficiency = 49%

- Gain = 17.5 dB

= 100 W

1dB

Gain

•ꢀ Integrated ESD protection: Human Body Model,

Class 1C (per JESD22-A114)

-25

-50

-75

•ꢀ Capable of handling 10:1 VSWR @28 V, 120 W

PAR @ 0.01% CCDF

(CW) output power

•ꢀ Low thermal resistance

•ꢀ Pb-free and RoHS compliant

c241702fc-gr1a

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)

= 28 V, I = 360 mA, V = 1.2 V, P = 28 W avg, ƒ = 2400 MHz. 3GPP signal, 3.84 MHz

DQ(main)

GS(peak)

OUT

channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.

Characteristic

Symbol

Min

15.5

Typ

16.5

Max

—

Unit

Gain

Drain Efﬁciency

h_D

—

Adjacent Channel Power Ratio

Output PAR (at 0.01% probability on CCDF)

ACPR

OPAR

—

–33.5

7.5

–28.0

—

dBc

6.5

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 02.1, 2016-06-22

12 3 4 5 6 7...10

中文翻译

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与PXAC241702FC相关器件

型号	品牌	获取价格	描述	数据表
PXAC241702FCV1R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC241702FCV1R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC241702FCV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC241702FCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXAC243502FV	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor
PXAC243502FV_15	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor
PXAC243502FV_16	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor 3
PXAC243502FVV1R0	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor 3
PXAC243502FVV1R0XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor,
PXAC243502FVV1R250	INFINEON	获取价格	High Power RF LDMOS Field Effect Transistor 3

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