Datasheet > PXAC260622SC

PXAC260622SC

更新时间： 2024-11-25 01:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1252K
描述
Thermally-Enhanced High Power RF LDMOS FET

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PXAC260622SC 数据手册

PXAC260622SC

Thermally-Enhanced High Power RF LDMOS FET

75 W, 28 V, 2496 – 2690 MHz

Description

PXAC260622SC

Package H-37248H-4

with formed leads

The PXAC260622SC is a 75-watt LDMOS FET with an asymetric

design for use in multi-standard cellular power amplifier applications

in the 2496 to 2690 MHz frequency band.It features dual-path design,

input and output matching, and a thermally-enhanced, surface-mount

package with earless flange. Manufactured with Infineon's advanced

LDMOS process, this device provides excellent thermal performance

and superior reliability.

Features

Single-carrier WCDMA Drive-up

•ꢀ Broadband internal input and output matching

•ꢀ Asymmetrical Doherty design

V_DD= 28 V, I_DQ= 115 mA, ƒ = 2690 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

- Main: 25 W Typ (P

- Peak: 50 W Typ (P

)

1dB

•ꢀ Typical pulsed performance in a Doherty conﬁgura-

tion, at 39.5 dB P

10 µs, 10% DC

- Gain = 16dB

, 2690 MHz, 28 V, with pulse

OUT

Efficiency

- Efﬁciency = 45%

•ꢀ Integrated ESD protection

•ꢀ Pb-free and RoHS compliant

Gain

•ꢀ Capable of handling 10:1 VSWR @28 V, 50 W

-25

-50

-75

PAR @ 0.01% CCDF

(CW) output power

pxfc260622sc_g1

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Specifications (device tested in Infineon Doherty test fixture with straight leads)

= 28 V, I = 115 mA, P = 8.9 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =

OUT

10 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

14.5

Typ

15.8

Max

—

Unit

Drain Efﬁciency

h_D

—

Adjancent Channel Power Ratio

All published data at T = 25°C unless otherwise indicated

ACPR

—

–30

–27

dBc

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 02.1, 2015-06-03

12 3 4 5 6 7 8

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