Datasheet > PXAC261002FCV1R250

PXAC261002FCV1R250

更新时间： 2024-11-25 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	162K
描述
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 â 2690 MHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PXAC261002FCV1R250 数据手册

浏览型号PXAC261002FCV1R250的Datasheet PDF文件第2页

浏览型号PXAC261002FCV1R250的Datasheet PDF文件第3页

浏览型号PXAC261002FCV1R250的Datasheet PDF文件第4页

浏览型号PXAC261002FCV1R250的Datasheet PDF文件第5页

浏览型号PXAC261002FCV1R250的Datasheet PDF文件第6页

PXAC261002FC

Thermally-Enhanced High Power RF LDMOS FET

100 W, 28 V, 2490 – 2690 MHz

Description

The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric

design intended for use in multi-standard cellular power ampliﬁer

applications in the 2496 to 2690 MHz frequency band. Features

include dual-path design, high gain and a thermally-enhanced pack-

age with earless ﬂanges. Manufactured with Inﬁneon's advanced

PXAC261002FC

Package H-37248-4

LDMOS process, this device provides excellent thermal performance

and superior reliability.

Features

Two-carrier WCDMA Drive-up

V_DD= 26 V, I_DQ= 210 mA, V_GS1= 2.62 V,

ƒ = 2590 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz, Doherty Fixture

•

Broadband internal input and output matching

Asymmetric design

- Main: P1dB = 40 W Typ

- Peak: P1dB = 70 W Typ

•

Typical Pulsed CW performance, 2590 MHz, 26 V,

160 µs, 10% duty cycle, Doherty Conﬁguration

- Output power at P

= 46.5 dBm

= 50.1 dBm

Gain

1dB

3dB

•

Capable of handling 10:1 VSWR @28 V, 100 W

(CW) output power

Integrated ESD protection : Human Body Model,

Class 1C (per JESD22-A114)

•

Low thermal resistance

Efficiency

Pb-free and RoHS compliant

c261002fc_g1

Output Power (dBm)

RF Characteristics

Two-carrier WCDMA Speciﬁcations (tested in Inﬁneon production Doherty test ﬁxture)

= 26 V, I

= 210 mA, P

= 18 W avg, V

= 1.4 V, ƒ = 2550 MHz, ƒ = 2590 MHz, 3GPP signal, 3.84 MHz channel

OUT

GS2

bandwidth, 8 dB peak/average @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

14.1

Typ

15.1

Max

—

Unit

Drain Efﬁciency

η_D

—

Intermodulation Distortion

IMD

—

–22

—

–21

—

dBc

Output PAR at 0.01% probability on CCDF

OPAR

7.5

(one-carrier WCDMA, 2585 MHz, 10 dB PAR)

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 03.3, 2016-06-15

12 3 4 5 6 7 8

中文翻译

下载PDF

与PXAC261002FCV1R250相关器件

型号	品牌	获取价格	描述	数据表
PXAC261002FCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 10
PXAC261212FC_16	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC261212FCV1R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC261212FCV1R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC261212FCV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC261212FCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC33KBA	PHILIPS	获取价格	Microcontroller, 16-Bit, MROM, XA CPU, 32MHz, CMOS, PQCC44,
PXAC33KBA	NXP	获取价格	IC 16-BIT, MROM, 32 MHz, MICROCONTROLLER, PQCC44, PLASTIC, MO-047AC, SOT-187-2, LCC-44, Mi
PXAC33KBBD	PHILIPS	获取价格	Microcontroller, 16-Bit, MROM, XA CPU, 32MHz, CMOS, PQFP44,
PXAC33KBBD	NXP	获取价格	IC 16-BIT, MROM, 32 MHz, MICROCONTROLLER, PQFP44, 10 X 10 MM, 1.40 MM HEIGHT, PLASTIC, SOT

与PXAC261002FCV1R250相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

PXAC261002FCV1R250

PXAC261002FCV1R250 数据手册

与PXAC261002FCV1R250相关器件

与PXAC261002FCV1R250相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PXAC261002FCV1R250

PXAC261002FCV1R250 数据手册

与PXAC261002FCV1R250相关器件

与PXAC261002FCV1R250相关文章

您还可以找

您在本页遇到什么问题？