Datasheet > PXAC260602FCV1R0

PXAC260602FCV1R0

更新时间： 2024-11-06 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	551K
描述
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 â 2690 MHz

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PXAC260602FCV1R0 数据手册

PXAC260602FC

Thermally-Enhanced High Power RF LDMOS FET

60 W, P @ 28 V, 2620 – 2690 MHz

3dB

Description

PXAC260602FC

Package H-37248-4

The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical

design intended for use in multi-standard cellular power ampliﬁer

applications in the 2620 to 2690 MHz frequency band. Features

include dual-path design, high gain and thermally-enhanced package

with earless ﬂanges. Manufactured with Inﬁneon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

Features

•

Main: Input matched

Peak: Input and output matching

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 85 mA, V_GS= 2.62V,

ƒ = 2690 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

•

Asymmetric Doherty design

- Main: P1dB = 15 W Typ

- Peak: P1dB = 50 W Typ

•

Typical Pulsed CW performance, 2690 MHz,

28 V, 10 µs pulse width, 10% duty cycle, class AB,

Doherty Conﬁguration

Gain

- Output power at P

- Efﬁciency = 50%

- Gain = 15 dB

= 50 W

1dB

Typical two-carrier WCDMA performance,

2690 MHz, 28 V, 8 dB PAR @ 0.01% CCDF,

Doherty Conﬁguration

- Output power = 5 W

- Efﬁciency = 40%

Efficiency

- Gain = 15.7 dB

- IMD = –30 dBc

•

Capable of handling 10:1 VSWR @28 V, 50 W

(CW) output power

pxac260602fc_g1

27 29 31 33 35 37 39 41 43 45 47

Output Power (dBm)

Integrated ESD protection : Human Body Model,

Class 1B (per JESD22-A114)

•

Low thermal resistance

Pb-free and RoHS compliant

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in Inﬁneon Doherty test ﬁxture)

= 28 V, I = 85 mA, P = 5 W avg, V = V at 300 mA -1.0V, ƒ = 2620 – 2690 MHz, 3GPP signal, channel

OUT

GS(PK)

bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

15.7

Max

—

Unit

Linear Gain

Drain Efﬁciency

h_D

—

Adjacent Channel Power Ratio

ACPR

—

–31

–28

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 02.4, 2016-06-22

12 3 4 5 6 7 8

中文翻译

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