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PXAC203302FV_15 PDF预览

PXAC203302FV_15

更新时间: 2024-11-25 01:16:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 1200K
描述
Thermally-Enhanced High Power RF LDMOS FET

PXAC203302FV_15 数据手册

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PXAC203302FV  
Thermally-Enhanced High Power RF LDMOS FET  
330 W, 28 V, 1880 – 2025 MHz  
Description  
PXAC203302FV  
Package H-37275-4  
The PXAC203302FV is a 330-watt LDMOS FET with an asym-  
metrical design intended for use in multi-standard cellular power  
amplifier applications in the 1880 to 2025 MHz frequency band.  
Features include dual-path design, input matching, high gain and  
thermally-enhanced package with earless flanges. Manufactured  
with Infineon's advanced LDMOS process, this device provides  
excellent thermal performance and superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 900 mA, ƒ = 2025 MHz,  
3GPP WCDMA signal,  
•ꢀ Broadband internal input and output matching  
•ꢀ Asymmetrical Doherty design  
- Main : P  
- Peak : P  
= 130 W Typ  
= 200 W Typ  
1dB  
1dB  
PAR = 10 dB, 3.84 MHz BW  
24  
20  
16  
12  
8
60  
40  
20  
0
•ꢀ Typical Pulsed CW performance, 2025 MHz, 28 V,  
Efficiency  
combined outputs, Doherty Configuration  
- Output power at P  
- Efficiency = 55%  
- Gain = 16 dB  
= 250 W  
1dB  
Gain  
•ꢀ Capable of handling 10:1 VSWR @28 V, 250 W  
(CW) output power  
•ꢀ Human Body Model Class 2 (per ANSI/ESDA/  
-20  
-40  
-60  
JEDEC JS-001)  
PAR @ 0.01% CCDF  
•ꢀ Integrated ESD protection  
•ꢀ Low thermal resistance  
4
0
c203302fv_g1  
•ꢀ Pb-free and RoHS compliant  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 900 mA, V = 1.1 V, P = 56 W avg, ƒ = 2025 MHz, 3GPP signal, channel bandwidth = 3.84MHz,  
V
DD  
DQ  
GSPEAK  
OUT  
1
peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
15  
Typ  
16  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
45  
49  
%
Adjancent Channel Power Ratio  
ACPR  
–30.5  
–26  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 8  
Rev. 02, 2015-06-09  

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