Datasheet > PXAC192908FVV1R0XTMA1

PXAC192908FVV1R0XTMA1

更新时间： 2024-11-15 01:05:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1060K
描述
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 â 1995 MHz

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PXAC192908FV

Thermally-Enhanced High Power RF LDMOS FET

240 W, 28 V, 1930 – 1995 MHz

Description

PXAC192908FV

Package H-37275G-6/2

The PXAC192908FV is a 240-watt LDMOS FET with an asymmetri-

cal design intended for use in multi-standard cellular power ampliﬁer

applications in the 1930 to 1995 MHz frequency band. Features

include dual-path design, high gain and thermally-enhanced package

with earless ﬂanges. Manufactured with Inﬁneon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

Features

Single-carrier WCDMA Drive-up

•

Broadband internal input and output matching

Asymmetric Doherty design

V_DD= 28 V, I_DQ= 600 mA, ƒ = 1990 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

- Main: P

- Peak: P

= 120 W Typ

= 220 W Typ

1dB

•

Typical Pulsed CW performance, 1990 MHz, 28 V,

combined outputs

Efficiency

- Output power at P

- Efﬁciency = 54%

- Gain = 14 dB

= 240 W

1dB

Gain

•

Capable of handling 10:1 VSWR @28 V, 240 W

(CW) output power

-20

-40

-60

•

Integrated ESD protection

PAR @ 0.01% CCDF

Human Body Model, Class 2 (per ANSI/ESDA/

JEDEC JS-001)

•

Low thermal resistance

c192908fc_g1

Pb-free and RoHS compliant

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in Inﬁneon Doherty test ﬁxture)

= 28 V, I = 0.6 A, V = 0.55 V, P = 70 W avg, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

GS(PEAK)

OUT

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

Typ

Max

—

Unit

Drain Efﬁciency

Adjacent Channel Power Ratio

h_D

—

ACPR

—

–28

–25

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 9

Rev. 02.3, 2016-06-17

12 3 4 5 6 7...9

中文翻译

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与PXAC192908FVV1R0XTMA1相关器件

型号	品牌	获取价格	描述	数据表
PXAC192908FVV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 24
PXAC192908FVV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 24
PXAC200902FC	CREE	获取价格	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz
PXAC201202FC	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201202FC	CREE	获取价格	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz
PXAC201202FCV2R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201202FCV2R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201202FCV2R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201202FCV2R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201602FC	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 14

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