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PXAC201602FC PDF预览

PXAC201602FC

更新时间: 2024-11-06 01:05:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 402K
描述
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz

PXAC201602FC 数据手册

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PXAC201602FC  
Thermally-Enhanced High Power RF LDMOS FET  
140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz  
Description  
The PXAC201602FC is a 140-watt LDMOS FET for use in multi-  
standard cellular power amplifier applications in the 1880 to 1920  
MHz and 2010 to 2025 MHz frequency bands. It features input and  
output matching, and a thermally-enhanced package with earless  
flange. Manufactured with Infineon's advanced LDMOS process, this  
device provides excellent thermal performance and superior reliability.  
PXAC201602FC  
Package H-37248-4  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz  
Features  
Asymmetric Doherty design  
3GPP WCDMA signal:  
10 dB PAR, 3.84 MHz BW  
- Main: 55 W Typ (P  
- Peak: 85 W Typ (P  
)
)
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
1dB  
Broadband internal matching  
Efficiency  
Pulsed CW performance, 1960 MHz, 28 V  
- Output power at P  
- Gain = 18 dB  
= 100 W  
1dB  
Gain  
- Efficiency = 55%  
Capable of handling 10:1 VSWR @ 28 V, 140 W  
(CW) output power  
PAR @ 0.01% CCDF  
-20  
-40  
-60  
Integrated ESD protection  
4
Human Body Model Class 1C (per JESD22-A114)  
Low thermal resistance  
c201602fc-gr1a  
0
Pb-free and RoHS compliant  
25  
30  
35  
40  
45  
50  
Can be operated with I  
of up to 700 mA  
DQ  
Average Output Power (dBm)  
(not to exceed maximum ratings limits)  
RF Specifications  
Single-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture)  
= 28 V, V = 1.4 V, I = 360 mA, P = 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band-  
V
DD  
GS(PEAK)  
DQ  
OUT  
width = 3.84 MHz, 10 dB PAR @0.01% CCDF.  
Characteristic  
Symbol  
Min  
16.5  
41  
Typ  
17.7  
44  
Max  
Unit  
dB  
Gain  
G
ps  
Drain Efficiency  
hD  
%
Adjacent Channel Power Ratio  
ACPR  
OPAR  
OPAR  
–28  
–26  
dBc  
dB  
Output PAR @ 0.01% CCDF 1880 MHz  
Output PAR @ 0.01% CCDF 2025 MHz  
7.0  
7.8  
dB  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 9  
Rev. 04.1, 2016-07-19  

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