型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PXAC201602FCV1R0 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 14 | |
PXAC201602FCV1R0XTMA1 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 14 | |
PXAC201602FCV1R250 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 14 | |
PXAC201602FCV1R250XTMA1 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 14 | |
PXAC203302FV | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET | |
PXAC203302FV | CREE |
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Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz | |
PXAC203302FV_15 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET | |
PXAC203302FV_16 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 33 | |
PXAC203302FVV1R0 | INFINEON |
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RF Power Field-Effect Transistor | |
PXAC203302FVV1R0XTMA1 | INFINEON |
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RF Power Field-Effect Transistor, |