Datasheet > PXAC201202FC

PXAC201202FC

更新时间： 2024-11-25 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	1361K
描述
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 â 2200 MHz

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PXAC201202FC 数据手册

PXAC201202FC

Thermally-Enhanced High Power RF LDMOS FET

120 W, 28 V, 1800 – 2200 MHz

Description

The PXAC201202FC is a 120-watt LDMOS FET for use in multi-

standard cellular power ampliﬁer applications in the 1800 to 2200 MHz

frequency band.Its asymmetric and dual-path design make it ideal for

Doherty ampliﬁer designs. It features input and output matching, and

a thermally-enhanced package with earless ﬂange.Manufactured with

Inﬁneon's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability.

PXAC201202FC

Package H-37248-4

Features

Single-carrier 3GPP WCDMA

V_DD= 28 V, I_DQ= 240 mA, ƒ = 1805 MHz

3.84 MHz bandwidth

•ꢀ Broadband internal matching

•ꢀ Asymmetric Doherty design

- Main: P1dB = 35 W Typ

- Peak: P1dB = 80 W Typ

•ꢀ Broadband internal matching

Efficiency

•ꢀ CW performance in a Doherty configuration,

1805 MHz, 28 V

- Output power = 100 W P

1dB

Gain

- Gain = 17.3 dB at 17.8 W Avg.

- Efficiency = 46% at 17.8 W Avg.

•ꢀ CW performance in a Doherty configuration,

2100 MHz, 28 V

PAR @ 0.01% CCDF

-20

-40

- Output power = 15.8 W Avg.

- Gain = 15.5 dB

- Efficiency = 46%

c201202fc-v2-gr1a -60

•ꢀ Capable of handling 10:1 VSWR @ 28 V,

16 W (CW) output power

•ꢀ Integrated ESD protection: Human Body Model,

Average Output Power (dBm)

Class 1C (per JESD22-A114)

•ꢀ Low thermal resistance

•ꢀ Pb-free and RoHS compliant

RF Specifications, 1880 MHz

One-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture)

= 28 V, V = 1.4 V, I = 240 mA, P = 16 W average, ƒ = 1880 MHz. 3GPP WCDMA signal: 3.84 MHz band-

GS(peak)

OUT

width, 10 dB PAR @0.01% probability on CCDF.

Characteristic

Symbol

Min

Typ

Max

—

Unit

Gain

Drain Efficiency

h_D

—

Adjacent Channel Power Ratio

ACPR

—

–29

–26

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 05.1, 2016-06-22

12 3 4 5 6 7...10

中文翻译

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与PXAC201202FC相关器件

型号	品牌	获取价格	描述	数据表
PXAC201202FCV2R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201202FCV2R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201202FCV2R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201202FCV2R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 12
PXAC201602FC	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 14
PXAC201602FC	CREE	获取价格	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
PXAC201602FCV1R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 14
PXAC201602FCV1R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 14
PXAC201602FCV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 14
PXAC201602FCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 14

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