型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PXAC200902FC | CREE |
获取价格 |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz | |
PXAC201202FC | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 12 | |
PXAC201202FC | CREE |
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Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz | |
PXAC201202FCV2R0 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 12 | |
PXAC201202FCV2R0XTMA1 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 12 | |
PXAC201202FCV2R250 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 12 | |
PXAC201202FCV2R250XTMA1 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 12 | |
PXAC201602FC | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 14 | |
PXAC201602FC | CREE |
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Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz | |
PXAC201602FCV1R0 | INFINEON |
获取价格 |
Thermally-Enhanced High Power RF LDMOS FET 14 |