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PXAC192908FVV1R250XTMA1 PDF预览

PXAC192908FVV1R250XTMA1

更新时间: 2024-11-25 01:05:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1060K
描述
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz

PXAC192908FVV1R250XTMA1 数据手册

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PXAC192908FV  
Thermally-Enhanced High Power RF LDMOS FET  
240 W, 28 V, 1930 – 1995 MHz  
Description  
PXAC192908FV  
Package H-37275G-6/2  
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetri-  
cal design intended for use in multi-standard cellular power amplifier  
applications in the 1930 to 1995 MHz frequency band. Features  
include dual-path design, high gain and thermally-enhanced package  
with earless flanges. Manufactured with Infineon's advanced LDMOS  
process, this device provides excellent thermal performance and  
superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
Broadband internal input and output matching  
Asymmetric Doherty design  
VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
3.84 MHz BW  
- Main: P  
- Peak: P  
= 120 W Typ  
= 220 W Typ  
1dB  
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
Typical Pulsed CW performance, 1990 MHz, 28 V,  
combined outputs  
Efficiency  
- Output power at P  
- Efficiency = 54%  
- Gain = 14 dB  
= 240 W  
1dB  
Gain  
Capable of handling 10:1 VSWR @28 V, 240 W  
(CW) output power  
-20  
-40  
-60  
Integrated ESD protection  
PAR @ 0.01% CCDF  
Human Body Model, Class 2 (per ANSI/ESDA/  
JEDEC JS-001)  
4
Low thermal resistance  
0
c192908fc_g1  
Pb-free and RoHS compliant  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 0.6 A, V = 0.55 V, P = 70 W avg, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,  
V
DD  
DQ  
GS(PEAK)  
OUT  
1
peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
13  
Typ  
14  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
Adjacent Channel Power Ratio  
hD  
45  
49  
%
ACPR  
–28  
–25  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 9  
Rev. 02.3, 2016-06-17  

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