Datasheet > PTFA210601FV4

PTFA210601FV4

更新时间： 2024-11-24 06:37:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	258K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

PTFA210601FV4 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	196 W
子类别：	FET General Purpose Power

PTFA210601FV4 数据手册

PTFA210601E

PTFA210601F

Thermally-Enhanced High Power RF LDMOS FETs

60 W, 2110 – 2170 MHz

Description

The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs

designed for single- and two-carrier WCDMA power amplifier

applications in the 2110 to 2170 MHz band. Features include input

and output matching, and thermally-enhanced packages with slotted

or earless flanges. Manufactured with Infineon's advanced LDMOS

process, these devices provide excellent thermal performance and

superior reliability.

PTFA210601E

Package H-36265-2

PTFA210601F

Package H-37265-2

Features

2-Carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 550 mA, f = 2140 MHz, 3GPP WCDMA

signal, P/A R = 8 dB, 10 MHz carrier spacing

•

Thermally-enhanced packages, Pb-free and

RoHS-compliant

•

Broadband internal matching

-25

-30

-35

-40

-45

-50

-55

Typical two-carrier WCDMA performance at 2140

MHz, 28 V

- Average output power = 12 W

- Linear Gain = 16 dB

- Efficiency = 27.0%

- Intermodulation distortion = –38 dBc

- Adjacent channel power = –44 dBc

Efficiency

IM3

•

Typical CW performance, 2170 MHz, 28 V

- Output power at P–1dB = 68 W

- Efficiency = 58.5%

ACPR

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•

Excellent thermal stability, low HCI drift

Average Output Power (dBm)

Capable of handling 10:1 VSWR @ 28 V,

60 W (CW) output power

RF Characteristics

WCDMA Measurements (tested in Infineon test fixture)

= 28 V, I = 550 mA, P = 12 W average

OUT

ƒ = 2135 MHz, ƒ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

15.0

26.0

—

Typ

16.0

27.0

–38

Max

—

Unit

Drain Efficiency

h_D

—

Intermodulation Distortion

IMD

–37

dBc

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 03, 2007-11-19

12 3 4 5 6 7...10

中文翻译

下载PDF

与PTFA210601FV4相关器件

型号	品牌	获取价格	描述	数据表
PTFA210701E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 70
PTFA210701E-70W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA210701EV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA210701F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 70
PTFA210701F-70W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA210701FV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA211001E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
PTFA211001F	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
PTFA211801E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 1
PTFA211801E_11	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

与PTFA210601FV4相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

PTFA210601FV4

PTFA210601FV4 技术参数

PTFA210601FV4 数据手册

与PTFA210601FV4相关器件

与PTFA210601FV4相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PTFA210601FV4

PTFA210601FV4 技术参数

PTFA210601FV4 数据手册

与PTFA210601FV4相关器件

与PTFA210601FV4相关文章

您还可以找

您在本页遇到什么问题？