Datasheet > PTFA210701EV4

PTFA210701EV4

更新时间： 2024-11-19 21:02:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	395K
描述
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
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PTFA210701EV4 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.7	配置：	Single
最大漏极电流 (Abs) (ID)：	0.00001 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	200 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	190 W	子类别：	FET General Purpose Power
Base Number Matches：	1

PTFA210701EV4 数据手册

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FET

70 W, 2110 – 2170 MHz

Description

The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs

designed for single- and dual-carrier WCDMA power amplifier

applications in the 2110 MHz to 2170 MHz band. Features include

input and output matching, and thermally-enhanced packages with

slotted or earless flanges. Manufactured with Infineon's advanced

LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTFA210701E

Package H-36265-2

PTFA210701F

Package H-37265-2

Features

Two-carrier WCDMA Drive-up

V_DD= 30 V, I_DQ= 550 mA, ƒ = 2140 MHz, 3GPP WCDMA

signal, P/A R = 8 dB, 10 MHz carrier spacing

•

Thermally-enhanced packages, Pb-free and

RoHS-compliant

•

Broadband internal matching

-30

-35

-40

-45

-50

-55

-60

Typical two-carrier WCDMA performance at

2140 MHz, 30 V

- Average output power = 42 dBm

- Linear Gain = 16.5 dB

- Efficiency = 27.0%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –42.5 dBc

Efficiency

IM3

ACPR

•

Typical CW performance, 2170 MHz, 30 V

- Output power at P–1dB = 80 W

- Efficiency = 58%

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•

Excellent thermal stability, low HCI drift

Average Output Power (dBm)

Capable of handling 10:1 VSWR @ 30 V,

70 W (CW) output power

RF Characteristics

WCDMA Measurements (tested in Infineon test fixture)

= 30 V, I = 550 mA, P = 18 W average

OUT

ƒ = 2135 MHz, ƒ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

15.5

Typ

16.5

Max

—

Unit

Drain Efficiency

h_D

—

Intermodulation Distortion

IMD

—

–36.5

–35.5

dBc

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet – DISCONTINUED 1 of 10

Rev. 03, 2014-02-12

12 3 4 5 6 7...10

中文翻译

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与PTFA210701EV4相关器件

型号	品牌	获取价格	描述	数据表
PTFA210701F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 70
PTFA210701F-70W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA210701FV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA211001E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
PTFA211001F	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
PTFA211801E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 1
PTFA211801E_11	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
PTFA211801E-180W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA211801EV5R0	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
PTFA211801EV5R0XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic

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