Datasheet > PTFA192001E-200W

PTFA192001E-200W

更新时间： 2024-11-23 15:48:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	279K
描述
RF Power Field-Effect Transistor,

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PTFA192001E-200W 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

PTFA192001E-200W 数据手册

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

200 W, 1930 – 1990 MHz

Description

The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs

intended for single- and two-carrier WCDMA and CDMA applications

from 1930 to 1990 MHz. Features include input and output matching,

and thermally-enhanced packages with slotted or earless flanges.

Manufactured with Infineon's advanced LDMOS process, these

devices provide excellent thermal performance and superior reliability.

PTFA192001E

Package H-36260-2

PTFA192001F

Package H-37260-2

Features

2-Carrier WCDMA Drive-up

V_DD= 30 V, I_DQ= 1600 mA, ƒ = 1960 MHz, 3GPP

WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing

•

Pb-free, RoHS-compliant and thermally-enhanced

packages

•

Broadband internal matching

-25

-30

-35

-40

-45

-50

-55

Typical two-carrier WCDMA performance at 1990

MHz, 30 V

- Average output power = 47.0 dBm

- Linear Gain = 15.9 dB

- Efficiency = 27%

- Intermodulation distortion = –36 dBc

- Adjacent channel power = –41 dBc

Efficiency

IM3

•

Typical single-carrier WCDMA performance at 1960

MHz, 30 V, 3GPP signal, P/AR = 7.5 dB

- Average output power = 48.5 dBm

- Linear Gain = 15.9 dB

- Efficiency = 34%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –40 dBc

ACPR

Output Power, avg. (dBm)

•

Typical CW performance, 1960 MHz, 30 V

- Output power at P–1dB = 240 W

- Efficiency = 57%

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•

Excellent thermal stability, low HCI drift

Capable of handling 5:1 VSWR @ 30 V, 200 W

(CW) output power

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 05, 2008-05-15

12 3 4 5 6 7...11

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与PTFA192001E-200W相关器件

型号	品牌	获取价格	描述	数据表
PTFA192001EV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA192001EV4R250XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192001EV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192001F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
PTFA192001F-200W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA192001FV4FWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192401E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 2
PTFA192401EV4	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192401EV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192401F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 2

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