Datasheet > PTFA192401F-240W

PTFA192401F-240W

更新时间： 2024-11-19 14:44:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	425K
描述
RF Power Field-Effect Transistor

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PTFA192401F-240W 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

PTFA192401F-240W 数据手册

PTFA192401E

PTFA192401F

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

240 W, 1930 – 1990 MHz

Description

The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs

intended for single- and two-carrier WCDMA and CDMA applications

from 1930 to 1990 MHz. Features include input and output matching,

and thermally-enhanced packages with slotted or earless flanges.

Manufactured with Infineon's advanced LDMOS process, these

devices provide excellent thermal performance and superior

reliability.

PTFA192401E

Package H-36260-2

PTFA192401F

Package H-37260-2

Features

Single-carrier WCDMA Drive-up

V_DD= 30 V, I_DQ= 1600 mA, ƒ = 1960 MHz,

3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,

PAR = 8.5 dB, 3.84 MHz BW

•

Pb-free, RoHS-compliant and thermally-enhanced

packages

•

Broadband internal matching

-25

-30

-35

-40

-45

-50

-55

-60

-65

-70

Efficiency

Typical two-carrier WCDMA performance at

1960 MHz, 30 V

- Average output power = 47.0 dBm

- Linear Gain = 16 dB

- Efficiency = 27.5%

- Intermodulation distortion = –35 dBc

- Adjacent channel power = –41 dBc

ACPR Low

•

Typical single-carrier WCDMA performance at

1960 MHz, 30 V, 3GPP signal, PAR = 8.5 dB

- Average output power = 49 dBm

- Linear Gain = 16 dB

ACPR Up

- Efficiency = 33%

- Adjacent channel power = –33 dBc

Average Output Power (dBm)

•

Typical CW performance, 1960 MHz, 30 V

- Output power at P–1dB = 240 W

- Efficiency = 54%

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•

Excellent thermal stability, low HCI drift

Capable of handling 5:1 VSWR @ 30 V, 240 W

(CW) output power

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 02, 2009-04-01

12 3 4 5 6 7...11

中文翻译

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与PTFA192401F-240W相关器件

型号	品牌	获取价格	描述	数据表
PTFA192401FV4	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA210301E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
PTFA210301F	INFINEON	获取价格	暂无描述
PTFA210451E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 4
PTFA210601E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 6
PTFA210601E-60W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA210601F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 6
PTFA210601FV4	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PTFA210701E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 70
PTFA210701E-70W	INFINEON	获取价格	RF Power Field-Effect Transistor

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