Datasheet > PTF10019

PTF10019

更新时间： 2024-11-11 09:58:47

品牌	Logo	应用领域
ASI		/
页数	文件大小	规格书
1页	43K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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PTF10019 数据手册

PTF10019

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION:

The ASI PTF10019 is Designed for

Cellular, GSM, and D-AMPS

PACKAGE STYLE

applicarions from 860 tp 960 MHz.

FEATURES:

• 70 W, 860-960 MHz

• Internally matched

• Omnigold™ Metalization System

• Silicon Nitride Passivated

MAXIMUM RATINGS

65 V

V_DSS

V_GS

P_DISS

T_J

±20 V

215 W @ T_C= 25 °C

-40 °C to +200 °C

-40 °C to +150 °C

0.8 °C/W

T_STG

θ_JC

1 = DRAIN

2 = GATE

3 = SOURCE

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

V_(BR)DSS

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

_GS= 0 v

I_D= 25 mA

_DS= 26 V

_DS= 10 V

1.0

5.0

I_DSS

V_GS(th)

G_fs

I_D= 75 mA

I_D= 3.0 A

3.0

V_DS= 10 V

3.0

Siemens

13.0

14.5

P_G

η_C

_DD= 28 V

P_OUT= 70 W

I_DQ= 600 mA

f = 960 MHz

P-1dB

10:1

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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与PTF10019相关器件

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PTF10022	ERICSSON	获取价格	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel
PTF10027	ERICSSON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
PTF10031	ERICSSON	获取价格	50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
PTF10036	ERICSSON	获取价格	85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
PTF10037	ERICSSON	获取价格	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel
PTF10041	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 65V V(BR)DSS \| SOT-391BVAR
PTF10043	ERICSSON	获取价格	12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor
PTF10045	ERICSSON	获取价格	30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor