Datasheet > PTF10041

PTF10041

更新时间： 2024-11-10 23:29:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
6页	79K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 65V V(BR)DSS \| SOT-391BVAR

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PTF10041 数据手册

PTF 10041

GOLDMOS^®Field Effect Transistor

12 Watts, 1.99 GHz

Description

•

Guaranteed Performance at 1.99 GHz, 26 V_DS

- Output Power = 12 Watts Min

- Power Gain = 10 dB Min

The PTF 10041 is a 12–watt GOLDMOS FET intended for large

signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38%

efficiency with 10 dB minimum gain. Nitride surface passivation and

full gold metallization ensure excellent device lifetime and reliability.

•

Full Gold Metallization

Silicon Nitride Passivated

Excellent Thermal Stability

Back Side Common Source

100% Lot Traceability

Typical Output Power vs. Input Power

PTF10041

V_DD= 26 V

I_DQ= 125 mA

f = 1990 MHz

0.0

0.5

1.0

1.5

2.0

2.5

Input Power (Watts)

Package 20249

RF Specifications (Guaranteed)

Characteristic

Symbol

Min

Typ

Max

Units

Gain

(V = 26 V, P

= 3 W, I

= 125 mA, f = 1930, 1990 MHz)

—

Watts

OUT

Output Power at 1 dB Compression

(V = 26 V, I = 125 mA, f = 1990 MHz)

P-1dB

Drain Efficiency

(V = 26 V, P

= 12 W, I

= 125 mA, f = 1990 MHz)

= 125 mA, f = 1990 MHz

—

OUT

Load Mismatch Tolerance

(V = 26 V, P = 12 W, I

10:1

—

OUT

—all phase angles at frequency of test)

All published data at T = 25°C unless otherwise indicated.

CASE

12 3 4 5 6

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