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PTF10031 PDF预览

PTF10031

更新时间: 2024-11-10 22:26:11
品牌 Logo 应用领域
爱立信 - ERICSSON 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
6页 218K
描述
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF10031 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PTF10031 数据手册

 浏览型号PTF10031的Datasheet PDF文件第2页浏览型号PTF10031的Datasheet PDF文件第3页浏览型号PTF10031的Datasheet PDF文件第4页浏览型号PTF10031的Datasheet PDF文件第5页浏览型号PTF10031的Datasheet PDF文件第6页 
PTF 10031  
50 Watts, 1.0 GHz  
GOLDMOSField Effect Transistor  
Description  
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal  
amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0  
dB of gain. Nitride surface passivation and full gold metallization ensure  
excellent device lifetime and reliability.  
Performance at 960 MHz, 28 Volts  
- Output Power = 50 Watts  
- Power Gain = 13.0 dB Typ  
- Efficiency = 55% Typ  
Full Gold Metallization  
Silicon Nitride Passivated  
Excellent Thermal Stability  
Back Side Common Source  
Available in Package 20235 as PTF 10015  
100% Lot Traceability  
Typical Power Out & Efficiency vs. Power In  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
Package  
20222  
10031  
A-1234569744  
Output Power (W)  
Efficiency (%)  
VDD = 28 V  
IDQ = 350 mA  
f = 960 MHz  
10015  
A-1234561970  
Package  
20235  
0
1
2
3
4
Input Power (Watts)  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
Operating Junction Temperature  
V
DSS  
V
GS  
±20  
200  
T
J
Total Device Dissipation T  
Above 25°C derate by  
= 25°C  
P
D
175  
1.0  
Watts  
W/°C  
CASE  
Storage Temperature Range  
T
-65 to 150  
1.0  
°C  
STG  
Thermal Resistance (T  
All published data at T  
= 70°C)  
R
°C/W  
CASE  
qJC  
= 25°C unless otherwise indicated.  
CASE  
e
1

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