TY Semiconductor Co., Ltd 更新时间:2021-03-05 02:25:10
台湾TY专注致力于电源管理IC及功率器件(MOSFET)Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器,低压LV MOS管、中压MV MOS管、三极管、高频管等,封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
KDB6030L | TYSEMI | 获取价格 | ![]() |
栅极 | 52A, 30 V. RDS(ON) = 0.0135 VGS = 10 V Low gate charge (typical 34 nC). | |
KDB5690 | TYSEMI | 获取价格 | ![]() |
32 A, 60 V. RDS(ON) = 0.027 VGS = 10 V RDS(ON) = 0.032 VGS = 6 V | ||
KDB3682 | TYSEMI | 获取价格 | ![]() |
rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V | ||
KDB3672 | TYSEMI | 获取价格 | ![]() |
rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V | ||
KDB3632 | TYSEMI | 获取价格 | ![]() |
脉冲 | rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A UIS Capability (Single Pulse and Repetitive Pul | |
KDB2670 | TYSEMI | 获取价格 | ![]() |
栅极开关 | 19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge | |
KDB2570 | TYSEMI | 获取价格 | ![]() |
栅极开关 | 22 A, 150 V. RDS(ON) = 80 m VGS = 10 V Fast switching speed Low gate charge | |
KDB2552 | TYSEMI | 获取价格 | ![]() |
脉冲 | rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A UIS Capability (Single Pulse and Repetitive Puls | |
KDB2532 | TYSEMI | 获取价格 | ![]() |
二极管 | rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A Low QRR Body Diode | |
KDB15N50 | TYSEMI | 获取价格 | ![]() |
栅极驱动 | Low Gate Charge Qg results in Simple Drive Requirement Reduced rDS(ON) | |
IRLML2502 | TYSEMI | 获取价格 | ![]() |
开关 | Ultra Low On-Resistance N-Channel MOSFET Fast switching. | |
IRLML2402 | TYSEMI | 获取价格 | ![]() |
开关 | Ultra Low On-Resistance N-Channel MOSFET Fast switching. | |
IRF3205 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关脉冲局域网 | Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating | |
FDN5630 | TYSEMI | 获取价格 | ![]() |
转换器 | VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converter | |
FDB3632 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关脉冲PC | rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A UIS Capability (Single Pulse and Repetitive Pul | |
FDB2670 | TYSEMI | 获取价格 | ![]() |
栅极开关 | 19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge | |
FDB2570 | TYSEMI | 获取价格 | ![]() |
晶体栅极开关晶体管脉冲 | 22 A, 150 V. RDS(ON) = 80 m VGS = 10 V Fast switching speed Low gate charge | |
FDB2552 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关脉冲PC | rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A UIS Capability (Single Pulse and Repetitive Puls | |
AP2310GN | TYSEMI | 获取价格 | ![]() |
驱动 | Simple Drive Requirement Small Package Outline Surface Mount Device | |
2SK3901 | TYSEMI | 获取价格 | ![]() |
Low On-state resistance RDS(on)1 = 13m MAX.Low C iss: C iss =1950 pF TYP. | ||
2SK3899 | TYSEMI | 获取价格 | ![]() |
Low On-state resistance RDS(on)1 = 5.3m MAX.Low C iss: C iss = 5500 pF TYP. | ||
2SK3813 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | Low On-state resistance RDS(on)1 = 5.3 m MAX. Low C iss: C iss = 5500 pF TYP. | |
2SK3716 | TYSEMI | 获取价格 | ![]() |
晶体栅极二极管晶体管开关 | Super low on-state resistance: RDS(on)1 = 6.5 m MAX. Built-in gate protection diode | |
2SK3638 | TYSEMI | 获取价格 | ![]() |
栅极二极管 | Low on-state resistance RDS(on)1 = 8.5 m MAX. Built-in gate protection diode | |
2SK3634 | TYSEMI | 获取价格 | ![]() |
晶体栅极二极管晶体管开关 | High voltage: VDSS = 200 V Gate voltage rating: 30 V Built-in gate protection diode | |
2SK3628 | TYSEMI | 获取价格 | ![]() |
开关 | High-speed switching Low ON resistance Ron No secondary breakdown | |
2SK3575 | TYSEMI | 获取价格 | ![]() |
晶体驱动器栅极晶体管开关脉冲局域网 | 4.5V drive available. Low on-state resistance, RDS(on)1 = 4.5m MAX Low gate charge | |
2SK3573 | TYSEMI | 获取价格 | ![]() |
晶体驱动器栅极晶体管开关脉冲局域网 | 4.5V drive available. Low on-state resistance, RDS(on)1 = 4.0m MAX. Low gate charge | |
2SK3511 | TYSEMI | 获取价格 | ![]() |
晶体栅极二极管晶体管开关脉冲局域网 | Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode | |
2SK3484 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | Super low on-state resistance: RDS(on)1 = 125m MAX Low Ciss: Ciss = 900 pF TYP. |
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