Datasheet > KDB2552

KDB2552

更新时间： 2024-01-17 10:28:36

品牌	Logo	应用领域
TYSEMI		脉冲
页数	文件大小	规格书
2页	129K
描述
rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A UIS Capability (Single Pulse and Repetitive Pulse)

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KDB2552 数据手册

SMD Type

Product specification

KDB2552^(FDB2552)

Features

TO-263

Unit: mm

r^DS(ON)= 32m (Typ.), V^GS= 10V, I^D= 16A

Q^g(tot)= 39nC (Typ.), V^GS= 10V

Low Miller Charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low Q^RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current-Continuous T^C=25

T^A=25

Symbol

V^DSS

Rating

Unit

150

V^GSS

I^D

150

Power dissipation

P^D

1.0

Derate above 25

Thermal Resistance Junction to Ambient

Channel temperature

Storage temperature

R^èJA

T^ch

175

T^stg

-55 to +175

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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