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TY Semiconductor Co., Ltd 更新时间：2022-11-07 20:28:10

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

KRF7506	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET

KRF7504	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET

KRF7325	TYSEMI	获取价格			Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET

KRF7317	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET

KRF7313	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet

KRF7309	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet

KRF7307	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet

KRF7104	TYSEMI	获取价格			Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET

KQS4900	TYSEMI	获取价格		开关	Fast switching Improved dv/dt capability N-Channel 1.3 A, 60 V

KPCF8402	TYSEMI	获取价格			Low drain-source ON resistance High forward transfer admittance

KPA1890	TYSEMI	获取价格		驱动	Can be driven by a 4.0-V power source Low on-state resistance (VGS = 10 V, ID = 3.0 A)

KPA1871	TYSEMI	获取价格		驱动	Can be driven by a 2.5-V power source Low on-state resistance (VGS = 4.5 V, ID = 3.0 A)

KPA1792	TYSEMI	获取价格		栅极二极管	Low on-state resistance N-channel (VGS = 10 V, ID = 3.4 A) Built-in gate protection diode

KPA1790	TYSEMI	获取价格			Dual chip type Low on-state resistance (VGS = 10 V, ID = 0.5 A)

KPA1758	TYSEMI	获取价格		栅极栅极驱动	Dual MOS FET chips in small package 2.5 V gate drive type low on-state resistance

KPA1750	TYSEMI	获取价格		栅极栅极驱动	Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance

KP8M9	TYSEMI	获取价格		二极管	Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package.

KP8M8	TYSEMI	获取价格		二极管	Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package.

KP8M6	TYSEMI	获取价格		二极管	Low on-resistance Built-in G-S Protection Diode Small and Surface Mount Package

KP8M5	TYSEMI	获取价格		二极管	Low on-resistance Built-in G-S Protection Diode Small and Surface Mount Package

KP8M4	TYSEMI	获取价格		二极管	Low on-resistance Built-in G-S Protection Diode Small and Surface Mount Package

KP8M3	TYSEMI	获取价格		二极管	Low on-resistance Built-in G-S Protection Diode Built-in G-S Protection Diode

KP8M10	TYSEMI	获取价格		二极管	Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package.

KO8822	TYSEMI	获取价格		栅	VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V

KMDF2C03HD	TYSEMI	获取价格		电池	Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

KI9926A	TYSEMI	获取价格		栅	Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V

KI8205T	TYSEMI	获取价格			Super high dense cell trench design for low RDS(on) Rugged and reliable.

KI8205A	TYSEMI	获取价格		栅	Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V

KI6968BEDQ	TYSEMI	获取价格		栅	Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V

KI5908DC	TYSEMI	获取价格			TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprin