Datasheet > KP8M6

KP8M6

更新时间： 2024-10-01 12:31:35

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
2页	409K
描述
Low on-resistance Built-in G-S Protection Diode Small and Surface Mount Package

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中文翻译

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数据手册

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KP8M6 数据手册

SMD Type

TransistIoCICrs

Product specification

KP8M6

Features

Low on-resistance.

Built-in G-S Protection Diode.

Small and Surface Mount Package.

Power switching, DC / DC converter.

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source voltage

Symbol

V^DSS

V^GSS

I^D

N-Channel

P-Channel

-30

Unit

Gate-source voltage

-20

Drain current Continuous

Drain current Pulsed *

5.0

3.5

I^DP

Source current (Body diode) Continuous

Source current (Body diode) Pulsed *

Total power dissipation

Channel temperature

I^S

1.6

-1.6

-14

I^SP

P^D

150

T^ch

-55 to +150

62.5

Storage temperature

T^stg

Channel to ambient

R^{th (ch-a)}

* Pw 10 s, Duty cycle 1%

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

4008-318-123

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