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TY Semiconductor Co., Ltd 更新时间：2021-03-28 17:46:40

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

KI1902DL	TYSEMI	获取价格		栅	Drain-source voltage Vds 20V Gate-source voltage Vgs -12V

KI1563EDH	TYSEMI	获取价格			TrenchFET Power MOSFETs Drain-Source Voltage Vds 20V

KI1563DH	TYSEMI	获取价格		开关	Fast Switching TrenchFET Power MOSFETs Drain-Source Voltage Vds 20V

KI1557DH	TYSEMI	获取价格		开关栅	TrenchFET Power MOSFETs Fast Switchimg to Mninize Gate and Switching Losses

KI1555DL	TYSEMI	获取价格			PIN Configuration Drain-Source Voltage Vds 20V

KI1553DL	TYSEMI	获取价格			PIN Configuration Drain-Source Voltage Vds 20V

KI1551DL	TYSEMI	获取价格			PIN Configuration Drain-Source Voltage Vds 20V

KI1539DL	TYSEMI	获取价格			PIN Configuration Drain-Source Voltage Vds 30V

KI1501DL	TYSEMI	获取价格			PIN Configuration Drain-Source Voltage Vds 20V

KHC2300	TYSEMI	获取价格		开关	High-speed Switching No secondary breakdown Drain-Source Voltage Vds 300V

KHC21025	TYSEMI	获取价格		开关	High-speed Switching No secondary breakdown Very low on-resistance

KE3587-G	TYSEMI	获取价格			N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V

KDW2521C	TYSEMI	获取价格			N-Channel 5.5 A, 20 V P-Channel -3.8 A, 20 V High performance trench technology for extrem

KDW2504P	TYSEMI	获取价格		栅极	3.8 A, - 20 V. RDS(ON) = 0.043 Low gate charge High performance trench technology for extr

KDW2503N	TYSEMI	获取价格		开关	5.5 A, 20 V. RDS(ON) = 0.021 Fast switching speed High performance trench technology for e

KDS9952A	TYSEMI	获取价格			N-Channel 3.7A, 30V, RDS(ON)=0.08W P-Channel -2.9A, -30V, RDS(ON)=0.13W

KDS8958	TYSEMI	获取价格		开关	N-Channel 7.0 A, 30 V RDS(ON) = 0.028 RDS(ON) = 0.040 Fast switching speed

KDS8928A	TYSEMI	获取价格			N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 -4 A, -20 V RDS(ON) = 0.055

KDS8333C	TYSEMI	获取价格		栅极	N-Channel 4.1 A, 30 V RDS(ON) = 80m RDS(ON) = 130m Low gate charge

KDS6910	TYSEMI	获取价格		栅极	7.5 A, 30 V. RDS(ON) = 13m RDS(ON) = 17m Low gate charge

KDS4953	TYSEMI	获取价格		栅极	5 A, -30 V. RDS(ON) = 55m RDS(ON) = 95m Low gate charge(6nC typical)

KDS4559	TYSEMI	获取价格			N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m 3.5 A, -60 V RDS(ON) = 105

KDS3912	TYSEMI	获取价格		开关	3 A, 100 V. RDS(ON) = 125m RDS(ON) = 135m Fast switching speed

KDS3601	TYSEMI	获取价格		开关	1.3 A, 100 V. RDS(ON) = 480m RDS(ON) = 530m Fast switching speed

KTD2005	TYSEMI	获取价格		驱动器	Low ON resistance 2.5V drive Mounting height 1.1mm Composite type, facilitating high-densi

KRF8910	TYSEMI	获取价格		栅	Drain- Source Voltage VDS 20 V Gate-to-Source Voltage VGS -20 V

KRF7756	TYSEMI	获取价格			Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package

KRF7750	TYSEMI	获取价格			Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package

KRF7555	TYSEMI	获取价格			Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET

KRF7530	TYSEMI	获取价格			Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET