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TY Semiconductor Co., Ltd 更新时间：2021-03-04 06:08:47

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

KI5402DC	TYSEMI	获取价格		栅	Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS -20 V

KI4464DY	TYSEMI	获取价格			PWM Optimized for (Lowest Qg and Low RG) TrenchFET Power MOSFET

KI4390DY	TYSEMI	获取价格		开关	Extremely Low QgdWFET Technology for Switching Losses TrenchFETTM Power MOSFET

KI2328DS	TYSEMI	获取价格		栅	Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS -20 V

KI2314EDS	TYSEMI	获取价格			TrenchFET Power MOSFET ESD Protected: 3000 V Drain-Source Voltage VDS 20 V

KI2306	TYSEMI	获取价格			RDS(ON)=0.030VGS=10V RDS(ON)=0.035VGS=4.5V RDS(ON)=0.052VGS=2.5V

KI2304DS	TYSEMI	获取价格		栅	Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS - 20 V

KI2302DS	TYSEMI	获取价格			VDS=20V RDS(on)= 0.085 VGS=4.5V ,ID=3.6A RDS(on)= 0.115 VGS=2.5V ,ID=3.1A

KI1400DL	TYSEMI	获取价格		栅	Drain-source voltage VDS 20 V Gate-source voltage VGS -12 V

KHP45N03LT	TYSEMI	获取价格			Low on-state resistance Fast switching. Drain-Source Voltage VDS 30 V

KCLAMP0502B	TYSEMI	获取价格		电视	Designed to replace polymer TVS Protects up to two I/O lines Low profile ( 1mm )

KBLC05C	TYSEMI	获取价格		脉冲	350 Watts Peak Pulse Power per Line ( tp = 8/20 us ) Low Clamping Vltage

1SV250	TYSEMI	获取价格		二极管	Small interterminal capacitance (C=0.23pF typ). Small forward series resistance (rs=4.5 ma

1SV249	TYSEMI	获取价格		二极管	Small interterminal capacitance (C=0.23pF typ). Small forward series resistance (rs=4.5 ty

KTS3C3F30L	TYSEMI	获取价格		驱动器	Typical RDS(on) (N-Channel)=50m Typical RDS(on) (N-Channel)=140m Low threshold drive

KTHD3100C	TYSEMI	获取价格			Complementary N-Channel and P-Channel MOSFET

KTHC5513	TYSEMI	获取价格			Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary

KRF9952	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET

KRF7509	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET

KRF7389	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Ultra Low On-Resistance

KRF7343	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET

KRF7338	TYSEMI	获取价格			Ultra Low On-Resistance Dual N and P Channel MOSFET Available in Tape & Reel

KRF7319	TYSEMI	获取价格			Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET

KDV303N	TYSEMI	获取价格		二极管齐纳二极管栅	0.68 A, 25 V. RDS(ON) = 0.45 VGS = 4.5 V Gate-Source Zener for ESD ruggedness.

KDS5670	TYSEMI	获取价格			10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V High power and current handling capability

KDS4470	TYSEMI	获取价格			12.5 A, 40 V. RDS(ON) = 9m VGS = 10 V High power and current handling capability

KDS3512	TYSEMI	获取价格			4.0 A, 80 V. RDS(ON) = 70m VGS = 10 V High power and current handling capability

KDD3680	TYSEMI	获取价格			25 A, 100 V. RDS(ON) = 46m @ VGS = 10 V High power and current handling capability

KDD3670	TYSEMI	获取价格			34 A, 100 V. RDS( = 32m VGS = 10 V High power and current handling capability

KDB7045L	TYSEMI	获取价格			Critical DC electrical parameters specified at elevated temperature