Datasheet > KDB7045L

KDB7045L

更新时间： 2024-11-01 12:31:47

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描述
Critical DC electrical parameters specified at elevated temperature

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KDB7045L 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

KDB7045L

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

100 A, 30 V. R^DS(ON)= 0.0045

R^DS(ON)= 0.006

@ V^GS= 10 V

@ V^GS= 4.5 V

Critical DC electrical parameters specified at

elevated temperature

+0.1

1.27

-0.1

0.1max

Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor

High performance trench technology for extremely low R^DS(ON)

175 maximum junction temperature rating

+0.1

0.81

-0.1

2.54

1 gate

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 drain

2 Drain

3 source

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

Drain Current Continuous

V^GS

100

I^D

Drain Current Pulsed

300

P^D

125

Power dissipation @ T^C=25

0.85

-65 to 175

1.2

Derate above 25

Operating and Storage Temperature

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

T^J, T^STG

62.5

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