Datasheet > KDW2504P

KDW2504P

更新时间： 2024-11-20 12:31:39

品牌	Logo	应用领域
TYSEMI		栅极
页数	文件大小	规格书
2页	143K
描述
3.8 A, - 20 V. RDS(ON) = 0.043 Low gate charge High performance trench technology for extremely low RDS(ON)

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KDW2504P 数据手册

SMD Type

ICIC

Product specification

KDW2504P

TSSOP-8

Features

Unit: mm

-3.8 A, - 20 V. R^DS(ON)= 0.043 @ V^GS= -4.5 V

R^DS(ON)= 0.070 @ V^GS=-2.5V

Low gate charge

High performance trench technology for extremely low R^DS(ON)

Extended VGSS range ( 12V) for battery applications

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

-20

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

Drain Current Pulsed

-3.8

-30

I^D

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Operating and Storage Temperature

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Ambient (Note 1b)

P^D

0.6

T^J, T^STG

-55 to 150

125

208

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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