Datasheet > KI1563EDH

KI1563EDH

更新时间： 2024-11-01 12:31:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	208K
描述
TrenchFET Power MOSFETs Drain-Source Voltage Vds 20V

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KI1563EDH 数据手册

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Product specification

KI1563EDH

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

TrenchFET Power MOSFETs

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

2.1

-0.1

Absolute Maximum Ratings T^A= 25

N-Channel

5 secs Steady State

P-Channel

Parameter

Symbol

Unit

5 secs

Steady State

-20

Drain-Source Voltage

V^DS

V^GS

Gate-Source Voltage

1.28

0.92

1.13

0.81

-1

-0.88

-0.63

Continuous Drain Current (T^J= 150 )* T^A= 25

T^A= 85

I^D

-0.72

-3

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (Diode Conduction)*

0.61

0.74

0.38

0.48

0.57

0.3

-0.61

0.3

-0.48

0.57

0.3

Maximum Power Dissipation*

T^A= 25

T^A= 85

P^D

0.16

-55 to 150

Operating Junction and Storage Temperature Range

*Surface Mounted on 1" X 1' FR4 Board.

T^J, T^stg

Thermal Resistance Ratings T^A= 25

Parameter

Symbol

R^thJA

R^thJF

Typical

130

Maximum

170

Unit

5 sec

Maximum Junction-to-Ambient*

Steady State

170

220

Maximum Junction-to-Foot (Drain)

100

*Surface Mounted on 1" X 1" FR4 Board.

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