Datasheet > KPCF8402

KPCF8402

更新时间： 2024-09-17 12:31:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	405K
描述
Low drain-source ON resistance High forward transfer admittance

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数据手册

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KPCF8402 数据手册

TransistIoCICrs

Product specification

KPCF8402

Features

Low drain-source ON resistance

: P Channel R^{DS (ON)}= 60 m (typ.)

N Channel R^{DS (ON)}= 38 m (typ.)

High forward transfer admittance

: P Channel |Y^fs| = 5.9 S (typ.)

N Channel |Y^fs| = 6.8 S (typ.)

Low leakage current

: P Channel I^DSS= -10 A (V^DS= -30 V)

N Channel I^DSS= 10 A (V^DS= 30 V)

Enhancement-mode

: P Channel V^th= -0.8 to -2.0 V (V^DS= -10 V, I^D= -1mA)

N Channel V^th= 1.3 to 2.5 V (V^DS= 10 V, I^D= 1mA)

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^DSS

V^DGR

V^GSS

I^D

P-Channel

-30

N-Channel

Unit

Drain-source voltage

Drain-gate voltage (R^GS= 20 k

Gate-source voltage

)

-30

DC (Note 1)

-3.2

Drain current

Pulse (Note 1)

I^DP

-12.8

Single-device operation

(Note 3a)

P^{D (1)}

P^{D (2)}

P^{D (1)}

P^{D (2)}

1.35

1.12

0.53

0.33

1.35

1.12

0.53

0.33

Drain power dissipation (t =

5 s)

Single-device value at

dual operation(Note 3b)

Single-device operation

(Note 3a)

Drain power dissipation (t =

5 s) (Note 2b)

Single-device value at

dual operation(Note 3b)

Single pulse avalanche energy(Note 4)

Avalanche current

E^AS

I^AR

0.67

-1.6

2.6

Repetitive avalanche energy Single-device value at

dual operation (Note 2a, 3b, 5)

0.11

150

E^AR

Channel temperature

T^ch

-55 to 150

92.6

Storage temperature range

Single-device operation

Thermal resistance,channel

T^stg

R^{th (ch-a) (1)}

R^{th (ch-a) (2)}

R^{th (ch-a) (1)}

(Note 3a)

to ambient (t = 5 s) (Note

Single-device value at

2a)

111.6

235.8

dual operation (Note 3b)

Single-device operation

Thermal resistance,channel

to ambient (t = 5 s) (Note

2b)

(Note 3a)

Single-device value at

378.8

Rth (ch-a) (2)

dual operation (Note 3b)

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