Datasheet > KDB15N50

KDB15N50

更新时间： 2024-01-26 13:33:21

品牌	Logo	应用领域
TYSEMI		栅极驱动
页数	文件大小	规格书
2页	165K
描述
Low Gate Charge Qg results in Simple Drive Requirement Reduced rDS(ON)

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中文翻译

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KDB15N50 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

KDB15N50^(FDB15N50)

Features

TO-263

Unit: mm

Low Gate Charge Qg results in Simple Drive Requirement

Improved Gate, Avalanche and High Reapplied dv/dt

Ruggedness

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Reduced r^DS(ON)

Reduced Miller Capacitance and Low Input Capacitance

Improved Switching Speed with Low EMI

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

Rating

Unit

V^DSS

V^GSS

I^D

500

Gate to source voltage

Drain current T^C=25

Drain current-pulsed

I^dp

Power dissipation

300

P^D

Derate above 25

Thermal Resistance Junction to Ambient

Channel temperature

Storage temperature

R^èJA

T^ch

175

T^stg

-55 to +175

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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